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MLVS0603L08

Description
This specification is applicable to Chip Metal Oxide Varistor in multilayer technology
File Size47KB,1 Pages
ManufacturerETC1
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MLVS0603L08 Overview

This specification is applicable to Chip Metal Oxide Varistor in multilayer technology

MLVS Series
MLVS-0603 Series
This specification is applicable to Chip Metal
Oxide Varistor in multilayer technology.
Specifications
1.Rating(25± 5
℃)
Working voltage Resistance
Symbol
Units
Test Condition
MLVS0603M04
MLVS0603M06
MLVS0603M07
MLVS0603L08
MLVS0603K11
MLVS0603K14
V
RMS
Volts
V
DC
Volts
(Max.)
< 10
µA
Ir
X10 ohm
(Min.)
5 VDC
6
Features
1. Keeping low and stable leakage current.
2. Excellent assembly solderability.
3. Low clamping Voltage.
4. Quick response time (<1nSec.)
5. High transient current capability
6. Test Standard meets IEC 61000-4-2, 61000-4-4,
and 61000-4-5.
Peak Transient
current energy
i
max
Amps
(Max.)
8/20µs
W
max
Joules
(Max.)
10/1000µ
s
4
6
7
8
11
14
5.5
8
9
11
14
18
10
*
10
*
10
*
10
10
10
30
30
30
30
30
30
0.1
0.1
0.1
0.1
0.1
0.1
Part Number
SeriesType
Elements
Size
Tolerance
Vrms
MLV
MLV
MLV
MLV
MLV
MLV
S
S
S
S
S
S
0603
0603
0603
0603
0603
0603
M
M
M
L
K
K
04
06
07
08
11
14
*Measured resistance at 3.3V DC
V
RMS
– Maximum AC operating voltage the varistor can maintain and not
exceed 10
µA
leakage current
V
DC
– Maximum DC operating voltage the varistor can maintain and not
exceed 10
µA
leakage current
Ir – Resistance at 5 V DC
i
max
– Maximum peak current which may be applied with 8/20us
waveform without device failure
W
max
– Maximum energy which may be dissipated with
the 10/1000us waveform without device failure
2.Characteristics(25
±
5℃)
Varistor voltage
Clamping Voltage
Vc
Capacitance
Cp
Symbol
V
V
∆V
V
Series Type / MLV — Multilayer Varistor
Elements / S
— Single
Size
/0603 —1.60x0.80x0.80mm
3
Tolerance /M/L/K —
±
2 0%/
±
15%/
±
10%
Vrms
— Working Voltage Vrms
Dimensions
L
W
T
C
C
Volts
%
Volt (Max.)
pF (typ.)
Units
1mA DC
1KHz
1MHz
Test Condition
1A 8/20µs
MLVS0603M04
8
19
300
270
±20
MLVS0603M06
11
27
250
230
±20
MLVS0603M07
12.5
27
235
205
±20
MLVS0603L08
15
33
220
190
±15
MLVS0603K11
18
35
160
140
±10
MLVS0603K14
22
40
140
120
±10
V
V
– Voltage across the device measured at 1mA DC current
Vc – Maximum peak current across the varistor with 8/20us waveform and 1A
pulse current
Cp – Device capacitance measured with zero volt bias 1Vrms
Electrical Characteristics
1.General technical Characteristics
Operating temperature
Storage temperature
esponse time
Solderability
Solder leach resistance
-55 … +125℃(85℃)
-55 … +125℃(85℃)
<1 ns
235℃, 2s
260℃, 10s
0603
L
W
T
C
1.60
±
0.20
0.80
±
0.20
0.80
±
0.20
0.30
±
0.20
2. Environmental Characteristics
Characteristics
Bias humidity
Thermal shock
Vibration
Specifications
∆V
V
/V
V
≦±10%
∆V
V
/V
V
≦±10%
∆V
V
/V
V
≦±10%
Test condition
90%RH, 40℃, Working voltage, 1000 hours
-40℃ to 85℃, 30 min. cycle, 5 cycles
10 to 50 to 10 Hz, 1 min. cycle, 2 hours each in
X-Y-Z
Working voltage, 25℃, 1000 hours
260℃, 10s
Unit : mm
∆V
V
/V
V
≦±10%
Full load voltage
Solder leach resistance
∆V
V
/V
V
≦±10%
INPAQ TECHNOLOGY CO.,LTD

MLVS0603L08 Related Products

MLVS0603L08 MLVS-0603 MLVS0603K11 MLVS0603K14 MLVS0603M04 MLVS0603M06 MLVS0603M07
Description This specification is applicable to Chip Metal Oxide Varistor in multilayer technology This specification is applicable to Chip Metal Oxide Varistor in multilayer technology This specification is applicable to Chip Metal Oxide Varistor in multilayer technology This specification is applicable to Chip Metal Oxide Varistor in multilayer technology This specification is applicable to Chip Metal Oxide Varistor in multilayer technology This specification is applicable to Chip Metal Oxide Varistor in multilayer technology This specification is applicable to Chip Metal Oxide Varistor in multilayer technology
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