EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

CPF214R300DER36

Description
Fixed Resistor, Metal Film, 2W, 14.3ohm, 350V, 0.5% +/-Tol, 25ppm/Cel, Through Hole Mount, AXIAL LEADED
CategoryPassive components    The resistor   
File Size103KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

CPF214R300DER36 Overview

Fixed Resistor, Metal Film, 2W, 14.3ohm, 350V, 0.5% +/-Tol, 25ppm/Cel, Through Hole Mount, AXIAL LEADED

CPF214R300DER36 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
package instructionAXIAL LEADED
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFLAME PROOF, PRECISION
structureTubul
JESD-609 codee0
Lead diameter0.81 mm
Installation featuresTHROUGH HOLE MOUNT
Number of terminals2
Maximum operating temperature230 °C
Minimum operating temperature-65 °C
Package diameter3.68 mm
Package length8.74 mm
Package shapeTUBULAR PACKAGE
Package formAxial
method of packingTR, 11.5 INCH
Rated power dissipation(P)2 W
Rated temperature70 °C
resistance14.3 Ω
Resistor typeFIXED RESISTOR
surface mountNO
technologyMETAL FILM
Temperature Coefficient25 ppm/°C
Terminal surfaceTin/Lead (Sn/Pb)
Terminal shapeWIRE
Tolerance0.5%
Operating Voltage350 V
Two current-type control methods of inverter
Two current-type control methods of inverter Abstract: Two dual-loop instantaneous feedback control modes of the inverter - current-source quasi-PWM control mode and three-state DPM current hysteresis...
zbz0529 Industrial Control Electronics
24 GHz to 44 GHz Wideband Integrated Upconverter and Downconverter Boosts Microwave Radio Performance While Reducing Size
24 GHz to 44 GHz Wideband Integrated Upconverter and Downconverter Boosts Microwave Radio Performance While Reducing SizeAnalog Devices has introduced a pair of highly integrated microwave up-down con...
btty038 RF/Wirelessly
The relationship between baud rate and time, and the application of transistor/MOS in communication interface level conversion
The relationship between baud rate and time, and the application of transistor /MOS in communication interface level conversionThe serial port voltage domain of MCU is 3V , and the serial port voltage...
QWE4562009 Discrete Device
Medium and high voltage GaN devices: vertical or horizontal?
Vertical structures are generally considered to be advantageous for high-voltage, high-power devices because they facilitate current spreading and thermal management and allow high voltages to be achi...
石榴姐 RF/Wirelessly
[Help needed] This is a slightly complicated schematic diagram, about the TI processor and USB power supply part. There are some things I don't understand and I would like to ask everyone for help.
[table=98%] [tr][td]Please help me look at this diagram. I have been looking at it for two or three days, but I still can't fully understand it. This schematic diagram is only a part of it. The whole ...
流誓星空 TI Technology Forum
What is GAN semiconductor technology and how does it work?
For decades, the electronics and technology industries have relied on silicon as the main semiconductor chips used in their production. But lately, this chip has been scarce because its demand has bec...
兰博 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号