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BAT62-03WE6327

Description
Mixer Diode, Low Barrier, Silicon
CategoryDiscrete semiconductor    diode   
File Size60KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAT62-03WE6327 Overview

Mixer Diode, Low Barrier, Silicon

BAT62-03WE6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance0.6 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Schottky barrier typeLOW BARRIER

BAT62-03WE6327 Related Products

BAT62-03WE6327 BAT62-03WE6433
Description Mixer Diode, Low Barrier, Silicon Mixer Diode, Low Barrier, Silicon
Maker SIEMENS SIEMENS
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Maximum diode capacitance 0.6 pF 0.6 pF
Diode component materials SILICON SILICON
Diode type MIXER DIODE MIXER DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.1 W 0.1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Schottky barrier type LOW BARRIER LOW BARRIER
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