BCP56-10 datasheet, PDF - EEWORLD Datasheet

BCP56-10: Description1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz

	BCP56-10	BCP56	BCP56-16
Description	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	incompatible	incompatible	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SOT-223, 4 PIN
Reach Compliance Code	unknow	unknow	_compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	25	100
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e0	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W
Maximum power dissipation(Abs)	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	125 MHz	125 MHz	125 MHz

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