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BCP56

Description
1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size33KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BCP56 Overview

1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCP56 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz

BCP56 Related Products

BCP56 BCP56-10 BCP56-16
Description 1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible incompatible conform to
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SOT-223, 4 PIN
Reach Compliance Code unknow unknow _compli
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 63 100
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz

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