EEWORLDEEWORLDEEWORLD

Part Number

Search

GBU4J

Description
3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size320KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
Download Datasheet Parametric Compare View All

GBU4J Online Shopping

Suppliers Part Number Price MOQ In stock  
GBU4J - - View Buy Now

GBU4J Overview

3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBU4J Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current3 A
Processing package descriptionPLASTIC, GBU, 4 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum non-repetitive peak forward current150 A
DATA SHEET
SEMICONDUCTOR
GBU4A THRU GBU4M
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Amperes
FEATURES
•Plastic
package has Underwriters Laboratory Flammability
Classification 94V-0
•This
series is UL listed under the Recognized Component
Index, file number E314039
•High
case dielectric
strength of 1500 VRMS
•Ideal
for printed circuit boards
•Glass
passivated chip junction
•High
surge current capability
•High
temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
•High
temperature soldering : 260 C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.710 (18.0)
0.690 (17.5)
0.085 (2.16)
0.065 (1.65)
0.075
(1.9) R.
0.080 (2.03)
0.060 (1.52)
5
o
TYP.
0.085 (2.16)
0.075 (1.90)
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45
o
CHAMFER
9
o
TYP.
0.140 (3.56)
0.130 (3.30)
GBU
Unit:inch(mm)
O
MECHANICAL DATA
•Case:
Molded plastic body over passivated junctions
•Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
•Mounting
Position: Any (NOTE 4)
•Mounting
Torque: 5 in. - lb. max.
•Weight:
0.15 ounce, 4.0 grams
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
0.022 (0.56)
0.018 (0.46)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•Ratings
at 25℃ambient temperature unless otherwise specified
SYMBOLS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum average forward rectified TC=100°C (NOTE 1)
output current at TA=40°C (NOTE 2)
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)TJ=150°C
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage drop
per leg at 4.0A
Maximum DC reverse current at TA=25°C
rated DC blocking voltage per leg TA=125°C
Typical junction capacitance per leg (NOTE 3)
Typical thermal resistance per leg (NOTE 2)
(NOTE 1)
Operating junction and storage temperature range
NOTES:
(1) Unit case mounted on 1.6 x 1.6 x 0.06” thick (4.0 x4.0 x 0.15cm) Al. Plate
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375" (9.5mm) lead length
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(4) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
IR
Cj
RQJA
RQJC
TJ, TSTG
100.0
22.0
4.2
-55 to +150
I(AV)
VRRM
VRMS
VDC
GBU
4A
50
35
50
GBU
4B
100
70
100
GBU
4D
200
140
200
GBU
4G
400
280
400
4.0
3.0
150
93.0
1.0
5.0
500
45
GBU
4J
600
420
600
GBU
4K
800
560
800
GBU
4M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
IFSM
I2t
VF
Amps
A2sec
Volts
uA
pF
℃/W
http://www.yeashin.com
1
REV.02 20120305

GBU4J Related Products

GBU4J GBU4A GBU4B GBU4D GBU4G GBU4K GBU4M
Description 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
state TRANSFERRED - ACTIVE ACTIVE - DISCONTINUED ACTIVE
Diode type bridge rectifier diode - BRIDGE RECTIFIER DIODE bridge rectifier diode - bridge rectifier diode bridge rectifier diode
Is there a unified standard for the printed codes that can be recognized by the reading pen?
I recently came across a children's reading pen, an electronic device that can recognize specific ink patterns on books. I searched online and some people said it was OID encoding, but I didn't find a...
littleshrimp Integrated technical exchanges
MSP430G2553 MCU Programming Experience
TI's 430 series focuses on low power consumption. Its technical documents and Dome programs are very detailed, especially the technical documents, which really make people feel like worshipping. There...
Jacktang Microcontroller MCU
msp430g2553 electronic waste revival and reuse
I just started, and I bought a bunch of second-hand electronic price tags on a certain fish. The ink screen is 2.13 The disassembly introduction of this board is not repeated here, please see the link...
bbslucky Microcontroller MCU
"Practice together in 2021" + difficult working life
2020 is destined to be a difficult year. The epidemic has completely changed our lives. The overall environment is not good, and it is difficult to increase income. The only thing we can be thankful f...
EricCheng Talking
C2000 for Sensing and Signal Processing
C2000 MCUs include key features that effectively improve the performance of sensing and processing systems. In systems with control requirements, customers need accurate sensing of system parameters, ...
Jacktang Microcontroller MCU
μCOS-II Programming Basics
μCOS-II Programming Basics...
zxopenljx FPGA/CPLD

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号