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BZT52C18S

Description
Accuracy: - Regulated voltage value (typical value): 18V Reverse leakage current: 100nA @ 12.6V Maximum power: 200mW 18V, 200mW
CategoryDiscrete semiconductor    Zener diode   
File Size382KB,4 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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BZT52C18S Overview

Accuracy: - Regulated voltage value (typical value): 18V Reverse leakage current: 100nA @ 12.6V Maximum power: 200mW 18V, 200mW

BZT52C18S Parametric

Parameter NameAttribute value
Accuracy-
Stable voltage value (typical value)18V
Reverse leakage current100nA @ 12.6V
Maximum power200mW

BZT52C18S Preview

Download Datasheet
Surface mount zener diode
FEATURES
Planar die construction
General purpose, medium current
BZT52C2V0S-BZT52C51S
Pb
Lead-free
Ideally suited for automated assembly processes
APPLICATIONS
Zener diode
Ultra-small surface mount package
SOD-323
ORDERING INFORMATION
Type No.
BZT52C2V0S-BZT52C51S
Marking
See table 2
Package Code
SOD-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Forward Voltage
Power Dissipation
Thermal resistance, junction to ambient air
Junction temperature
Storage temperature range
@ I
F
=10mA
Symbol
V
F
P
d
R
θjA
T
j
T
stg
Value
0.9
200
625
150
-65 to +150
Unit
V
mW
℃/W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1KHz.
2014-03 01版
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