BC 846 ... BC 850
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
250 mW
SOT-23
(TO-236)
0.01 g
1.1
Plastic case
Kunststoffgehäuse
1.3
±0.1
Type
Code
1
2
2.5
max
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
BC 846
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
65 V
80 V
6V
Grenzwerte (T
A
= 25
/
C)
BC 847/850
45 V
50 V
250 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65…+ 150
/
C
BC 848/849
30 V
30 V
5V
Characteristics (T
j
= 25
/
C)
Group A
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10
:
A
V
CE
= 5 V, I
C
= 2 mA
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
1
Kennwerte (T
j
= 25
/
C)
Group B
typ. 150
200...450
Group C
typ. 270
420...800
h
FE
h
FE
typ. 90
110...220
h
fe
h
ie
h
oe
h
re
typ. 220
1.6...4.5 k
S
18 < 30
:
S
typ.1.5 *10
-4
typ. 330
3.2...8.5 k
S
30 < 60
:
S
typ. 2 *10
-4
typ. 600
6...15 k
S
60 < 110
:
S
typ. 3 *10
-4
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
10
01.11.2003
General Purpose Transistors
Characteristics (T
j
= 25
/
C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
E
= 0, V
CB
= 30 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
)
f = 200 Hz
V
CE
= 5 V, I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
f = 30 ... 15000 Hz
BC 846...
F
BC 848
BC 849/850
BC 849
BC 850
F
F
F
–
–
R
thA
–
f
T
C
CB0
C
EB0
100 MHz
–
–
I
EB0
–
–
I
CB0
I
CB0
–
–
–
–
V
BEon
V
BEon
580 mV
–
V
CEsat
V
CEsat
V
BEsat
V
BEsat
–
–
–
–
BC 846 ... BC 850
Kennwerte (T
j
= 25
/
C)
Typ.
90 mV
200 mV
700 mV
900 mV
660 mV
–
Max.
250 mV
600 mV
–
–
700 mV
770 mV
15 nA
5
:
A
100 nA
–
3.5 pF
9 pF
6 pF
–
Base saturation voltage – Basis-Sättigungsspannung
1
)
Collector-Base Capacitance – Kollektor-Basis-Kapazität
Emitter-Base Capacitance – Emitter-Basis-Kapazität
2 dB
1.2 dB
1.4 dB
1.4 dB
10 dB
4 dB
4 dB
3 dB
420 K/W
2
)
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 846A = 1A
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 847A = 1E
BC 848A = 1J
BC 856 ... BC 860
BC 846B = 1B
BC 847B = 1F
BC 848B = 1K
BC 849B = 2B
BC 850B = 2F
BC 847C = 1G
BC 848C = 1L
BC 849C = 2C
BC 850C = 2G
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
11
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