KM68V257EJI-20 datasheet, PDF - EEWORLD Datasheet

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KM68V257EJI-20: DescriptionStandard SRAM, 32KX8, 20ns, CMOS, PDSO28; Categorystorage storage; File Size387KB，8 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM68V257EJI-20 Overview

Standard SRAM, 32KX8, 20ns, CMOS, PDSO28

KM68V257EJI-20 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	SOJ, SOJ28,.34
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	20 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	262144 bi
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Minimum standby current	3 V
Maximum slew rate	0.07 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40

KM68V257EJI-20 Related Products

	KM68V257EJI-20	KM68V257ETGI-20	KM68V257EJI-12	KM68V257EJI-15	KM68V257ETGI-12	KM68V257ETGI-15
Description	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Reach Compliance Code	unknow	unknown	unknown	unknown	unknow	unknow
Maximum access time	20 ns	20 ns	12 ns	15 ns	12 ns	15 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-J28	R-PDSO-G28	R-PDSO-J28	R-PDSO-J28	R-PDSO-G28	R-PDSO-G28
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	262144 bi	262144 bit	262144 bit	262144 bit	262144 bi	262144 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8
Humidity sensitivity level	3	3	3	3	3	3
Number of terminals	28	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	TSSOP	SOJ	SOJ	TSSOP	TSSOP
Encapsulate equivalent code	SOJ28,.34	TSSOP28,.53,22	SOJ28,.34	SOJ28,.34	TSSOP28,.53,22	TSSOP28,.53,22
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Minimum standby current	3 V	3 V	3 V	3 V	3 V	3 V
Maximum slew rate	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	GULL WING	J BEND	J BEND	GULL WING	GULL WING
Terminal pitch	1.27 mm	0.55 mm	1.27 mm	1.27 mm	0.55 mm	0.55 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
package instruction	SOJ, SOJ28,.34	TSSOP, TSSOP28,.53,22	-	SOJ, SOJ28,.34	TSSOP, TSSOP28,.53,22	TSSOP, TSSOP28,.53,22

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