LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES
· Small plastic SMD package
· Continuous reverse voltage: max. 35 V
· Continuous forward current: max. 100 mA
· Low diode capacitance: max. 1.2 pF
· Low diode forward resistance: max. 0.7
Ω.
APPLICATIONS
· Low loss band switching in VHF television tuners.
· Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523 (SC-79) SMD package.
BA 277
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
Ts =90°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
V
F
I
R
C
d
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
=10 mA
V
R
= 25 V
V
R
= 20 V; T
amb
=75°C
f = 1 MHz; V
R
= 6 V; note 1; see Fig.1
MAX.
1
50
1
1.2
0.7
UNIT
V
nA
µA
pF
Ω
r
D
diode forward resistance I
F
= 2 mA; f = 100 MHz; note 1; see Fig.2
S19–1/2
LESHAN RADIO COMPANY, LTD.
BA 277
10
2.5
2.0
C
d
(pF)
1.5
1
r
D
(
Ω)
f = 1 MHz; T
j
=25°C
10
-1
1
10
10
2
1.0
0.5
f = 100 MHz; T
j
=25°C
0
10
–1
1
10
V
R
(V)
I
F
(mA )
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
Fig.2 Diode forward resistance as a function of
forward current; typical values.
S19–2/2
DSP and ARM Processors
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