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AP9475GM_08

Description
Simple Drive Requirement, Lower Gate Charge
File Size199KB,5 Pages
ManufacturerAPEC
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AP9475GM_08 Overview

Simple Drive Requirement, Lower Gate Charge

AP9475GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G
60V
40mΩ
6.9A
Lower Gate Charge
Fast Switching Characteristic
D
D
D
SO-8
S
S
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+25
6.9
5.5
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
Data and specifications subject to change without notice
1
200812232
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