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2N2033

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size97KB,1 Pages
ManufacturerElectronic Transistors Corp
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2N2033 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN

2N2033 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerElectronic Transistors Corp
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSingle
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)1 MHz

2N2033 Related Products

2N2033 2SD366
Description Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker Electronic Transistors Corp Electronic Transistors Corp
Parts packaging code TO-5 TO-220AB
package instruction CYLINDRICAL, O-MBCY-W3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 60 V 60 V
Configuration Single SINGLE
Minimum DC current gain (hFE) 20 30
JEDEC-95 code TO-5 TO-220AB
JESD-30 code O-MBCY-W3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 140 °C
Package body material METAL PLASTIC/EPOXY
Package shape ROUND RECTANGULAR
Package form CYLINDRICAL FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 5 W 25 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE THROUGH-HOLE
Terminal location BOTTOM SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 1 MHz 0.07 MHz
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