Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Electronic Transistors Corp |
Parts packaging code | TO-5 |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 3 A |
Collector-emitter maximum voltage | 60 V |
Configuration | Single |
Minimum DC current gain (hFE) | 20 |
JEDEC-95 code | TO-5 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 5 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 1 MHz |
2N2033 | 2SD366 | |
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Description | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
Is it Rohs certified? | incompatible | incompatible |
Maker | Electronic Transistors Corp | Electronic Transistors Corp |
Parts packaging code | TO-5 | TO-220AB |
package instruction | CYLINDRICAL, O-MBCY-W3 | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknow | unknow |
ECCN code | EAR99 | EAR99 |
Maximum collector current (IC) | 3 A | 3 A |
Collector-emitter maximum voltage | 60 V | 60 V |
Configuration | Single | SINGLE |
Minimum DC current gain (hFE) | 20 | 30 |
JEDEC-95 code | TO-5 | TO-220AB |
JESD-30 code | O-MBCY-W3 | R-PSFM-T3 |
JESD-609 code | e0 | e0 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Maximum operating temperature | 200 °C | 140 °C |
Package body material | METAL | PLASTIC/EPOXY |
Package shape | ROUND | RECTANGULAR |
Package form | CYLINDRICAL | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN |
Maximum power dissipation(Abs) | 5 W | 25 W |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | THROUGH-HOLE |
Terminal location | BOTTOM | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON |
Nominal transition frequency (fT) | 1 MHz | 0.07 MHz |