2SD366 datasheet, PDF - EEWORLD Datasheet

2SD366: DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size97KB，1 Pages; ManufacturerElectronic Transistors Corp

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2SD366 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Electronic Transistors Corp
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	140 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	0.07 MHz

	2SD366	2N2033
Description	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	Electronic Transistors Corp	Electronic Transistors Corp
Parts packaging code	TO-220AB	TO-5
package instruction	FLANGE MOUNT, R-PSFM-T3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	Single
Minimum DC current gain (hFE)	30	20
JEDEC-95 code	TO-220AB	TO-5
JESD-30 code	R-PSFM-T3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	140 °C	200 °C
Package body material	PLASTIC/EPOXY	METAL
Package shape	RECTANGULAR	ROUND
Package form	FLANGE MOUNT	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	25 W	5 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	WIRE
Terminal location	SINGLE	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	0.07 MHz	1 MHz

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