2N743 datasheet, PDF - EEWORLD Datasheet

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2N743: DescriptionRF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size104KB，1 Pages; ManufacturerInternational Devices Inc

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2N743 Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-18, TO-18, 3 PIN

2N743 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	5 pF
Collector-emitter maximum voltage	12 V
Configuration	Single
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	280 MHz

2N743 Related Products

	2N743	2N3010	2N709
Description	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-18, TO-18, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-18, TO-18, 3 PIN	RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-18, TO-18, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	International Devices Inc	International Devices Inc	International Devices Inc
Parts packaging code	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Collector-based maximum capacity	5 pF	3 pF	3 pF
Collector-emitter maximum voltage	12 V	6 V	6 V
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	20	25	20
JEDEC-95 code	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	175 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	280 MHz	600 MHz	600 MHz
Maximum collector current (IC)	0.2 A	0.05 A	-

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