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PG307C

Description
Variable Capacitance Diode, 6.8pF C(T), Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size62KB,1 Pages
ManufacturerMsi Electronics Inc
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PG307C Overview

Variable Capacitance Diode, 6.8pF C(T), Silicon, Abrupt

PG307C Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresSUPER Q
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio3.55
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5e-7 µA
Reverse test voltage50 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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