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S9013

Description
Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 25V Rated power: 225mW
CategoryDiscrete semiconductor    triode   
File Size583KB,3 Pages
ManufacturerANBON SEMICONDUCTOR
Websitehttp://www.formosagr.com/

Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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S9013 Overview

Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 25V Rated power: 225mW

S9013 Parametric

Parameter NameAttribute value
Transistor typeNPN
Collector current Ic500mA
Collector-emitter breakdown voltage Vce25V
rated power225mW

S9013 Preview

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S9013
General Purpose Transistors
NPN Silicon
Package outline
SOT-23
Features
High collector current. (500mA)
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
0.040 (1.02)
0.035 (0.89)
Suffix "-H" indicates Halogen-free part, ex. S9013 -H.
0.020 (0.50)
(C)
0.120 (3.04)
0.110 (2.80)
.081(2.04)
.070(1.78)
(B)
(A)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.055 (1.40)
0.047 (1.20)
0.098 (2.50)
0.083 (2.10)
0.024 (0.60)
0.018 (0.45)
Mounting Position : Any
Weight : Approximated 0.008 gram
0.044 (1.10)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
Rating
Collector–emitter voltage
Collector–base voltage
Emitter–base voltage
Collector current — continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
25
40
5
500
Unit
V
V
V
mA
Thermal characteristics
PARAMETER
Total device dissipation FR-5 board
(1)
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Operating junction temperature range
Storage temperature range
1. FR-5 = 1.0 X 0.75 X0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
T
A
= 25°C
Derate above 25°C
Junction to ambient
T
A
= 25°C
Derate above 25°C
Junction to ambient
R
θJA
T
J
T
STG
-55
-55
R
θJA
P
D
Symbol
P
D
MIN.
TYP.
MAX. UNIT
225
1.8
556
300
2.4
417
+150
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
.0070 (0.177)
.0034 (0.085)
Revision
D
0.015 (0.37)
Page.
3
Page 1
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