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2N3879

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size184KB,2 Pages
ManufacturerGeneral Transistor Corp
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2N3879 Overview

Transistor

2N3879 Parametric

Parameter NameAttribute value
MakerGeneral Transistor Corp
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)7 A
ConfigurationSingle
Minimum DC current gain (hFE)12
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)35 W
surface mountNO
Nominal transition frequency (fT)40 MHz
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