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SG2013J

Description
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size436KB,10 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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SG2013J Overview

Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon

SG2013J Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instructionIN-LINE, R-CDIP-T16
Reach Compliance Codecompli
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage50 V
Configuration7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)900
JESD-30 codeR-CDIP-T16
JESD-609 codee0
Number of components7
Number of terminals16
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
VCEsat-Max1.9 V
SG2000
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Description
The SG2000 series integrates seven NPN Darlington
pairs with internal suppression diodes to drive lamps,
relays, and solenoids in many military, aerospace, and
industrial applications that require severe environments.
All units feature open collector outputs with greater than
50V breakdown voltages combined with 500mA current
carrying capabilities.
Five different input configurations provide optimized
designs for interfacing with DTL, TTL, PMOS, or CMOS
drive signals. These devices are designed to operate
from -55°C to 125°C ambient temperature in a 16 pin
dual in line ceramic (J) package and 20 pin Leadless
Chip Carrier (LCC). The plastic
SOIC
(DW) is
designed to operate over the commercial temperature
range of 0°C to 70°C.
Features
Seven
NPN
Darlington
Pairs
-55°C to 125°C
Ambient Operating Temperature
Range
Collector
Currents
to 600mA
Output
Voltages
from 50V to 95V
Internal
Clamping Diodes
for
Inductive Loads
DTL, TTL, PMOS, or CMOS
Compatible Inputs
Hermetic
Ceramic Package
High Reliability Features
Following are the high reliability features of SG2000
series:
Available To MIL-STD-883 – 883, ¶ 1.2.1
Available to DSCC
- Standard Microcircuit Drawing (SMD)
MIL-M38510/14101BEA -
SG2001J-JAN
MIL-M38510/14102BEA -
SG2002J-JAN
MIL-M38510/14103BEA -
SG2003J-JAN
MIL-M38510/14104BEA -
SG2004J-JAN
-
MSC-AMS Level "S" Processing Available
Partial Schematics
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Figure 1 ·
Partial Schematics
December
2014 Rev. 1.4
www.microsemi.com
© 2014 Microsemi Corporation
1

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Description Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Microchip Microchip Microchip Microchip Microchip Microchip Microchip
package instruction IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16
Reach Compliance Code compli not_compliant compli compli compli compli compli
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.5 A 0.5 A 0.6 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 900 900 900 900 1000 1000 900
JESD-30 code R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of components 7 7 7 7 7 7 7
Number of terminals 16 16 16 16 16 16 16
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
VCEsat-Max 1.9 V 1.9 V 1.9 V 1.9 V 1.6 V 1.6 V 1.9 V
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