EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

SG2015J/883B

Description
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size436KB,10 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric Compare View All

SG2015J/883B Overview

Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon

SG2015J/883B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instructionIN-LINE, R-CDIP-T16
Reach Compliance Codecompli
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage50 V
Configuration7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)900
JESD-30 codeR-CDIP-T16
JESD-609 codee0
Number of components7
Number of terminals16
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
VCEsat-Max1.9 V

SG2015J/883B Related Products

SG2015J/883B SG2015J SG2013J SG2013J/883B SG2014J/883B SG2003J SG2003J/883B
Description Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Microchip Microchip Microchip Microchip Microchip Microchip Microchip
package instruction IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16 IN-LINE, R-CDIP-T16
Reach Compliance Code compli not_compliant compli compli compli compli compli
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 900 900 900 900 900 1000 1000
JESD-30 code R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16 R-CDIP-T16
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of components 7 7 7 7 7 7 7
Number of terminals 16 16 16 16 16 16 16
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
VCEsat-Max 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.6 V 1.6 V

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号