|
SG2015J/883B |
SG2015J |
SG2013J |
SG2013J/883B |
SG2014J/883B |
SG2003J |
SG2003J/883B |
Description |
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
Maker |
Microchip |
Microchip |
Microchip |
Microchip |
Microchip |
Microchip |
Microchip |
package instruction |
IN-LINE, R-CDIP-T16 |
IN-LINE, R-CDIP-T16 |
IN-LINE, R-CDIP-T16 |
IN-LINE, R-CDIP-T16 |
IN-LINE, R-CDIP-T16 |
IN-LINE, R-CDIP-T16 |
IN-LINE, R-CDIP-T16 |
Reach Compliance Code |
compli |
not_compliant |
compli |
compli |
compli |
compli |
compli |
Maximum collector current (IC) |
0.6 A |
0.6 A |
0.6 A |
0.6 A |
0.6 A |
0.5 A |
0.5 A |
Collector-emitter maximum voltage |
50 V |
50 V |
50 V |
50 V |
50 V |
50 V |
50 V |
Configuration |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Minimum DC current gain (hFE) |
900 |
900 |
900 |
900 |
900 |
1000 |
1000 |
JESD-30 code |
R-CDIP-T16 |
R-CDIP-T16 |
R-CDIP-T16 |
R-CDIP-T16 |
R-CDIP-T16 |
R-CDIP-T16 |
R-CDIP-T16 |
JESD-609 code |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
Number of components |
7 |
7 |
7 |
7 |
7 |
7 |
7 |
Number of terminals |
16 |
16 |
16 |
16 |
16 |
16 |
16 |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
Package body material |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
NPN |
NPN |
NPN |
NPN |
NPN |
NPN |
NPN |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
VCEsat-Max |
1.9 V |
1.9 V |
1.9 V |
1.9 V |
1.9 V |
1.6 V |
1.6 V |