PBSS302NX datasheet, PDF - EEWORLD Datasheet

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PBSS302NX: Description20 V, 5.3 A NPN low VCEsat (BISS) transistor; CategoryDiscrete semiconductor The transistor; File Size175KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBSS302NX Overview

20 V, 5.3 A NPN low VCEsat (BISS) transistor

PBSS302NX Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-89
package instruction	PLASTIC, SC-62, TO-243, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	5.3 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-243AA
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2.1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	140 MHz
Maximum off time (toff)	355 ns
Maximum opening time (tons)	55 ns

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PBSS302NX

20 V, 5.3 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 20 November 2009

Product data sheet

1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT89

(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS302PX.

1.2 Features

Low collector-emitter saturation voltage V

CEsat

High collector current capability I

and I

High collector current gain (h

) at high I

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

DC-to-DC conversion

MOSFET gate driving

Motor control

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

CEO

CEsat

[1]

Quick reference data

Conditions

open base

single pulse;

≤

1 ms

= 4 A;

= 200 mA

[1]

Symbol Parameter

collector-emitter voltage

collector current

peak collector current

collector-emitter

saturation resistance

Min

Typ

Max

5.3

10.6

Unit

mΩ

Pulse test: t

≤

300

μs; δ ≤

0.02.

PBSS302NX Related Products

	PBSS302NX	PBSS302NX,115
Description	20 V, 5.3 A NPN low VCEsat (BISS) transistor	20 V, 5.3 A NPN low VCEsat (BISS) transistor
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	SOT-89	SOT-89
package instruction	PLASTIC, SC-62, TO-243, 3 PIN	PLASTIC, SMD, SC-62, 3 PIN
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	5.3 A	5.3 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200
JESD-30 code	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	2.1 W	2.1 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	140 MHz	140 MHz
Maximum off time (toff)	355 ns	355 ns
Maximum opening time (tons)	55 ns	55 ns

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