20 V, 5.3 A NPN low VCEsat (BISS) transistor
| Parameter Name | Attribute value |
| Brand Name | NXP Semiconduc |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | SOT-89 |
| package instruction | PLASTIC, SMD, SC-62, 3 PIN |
| Contacts | 3 |
| Manufacturer packaging code | SOT89 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 5.3 A |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 200 |
| JESD-30 code | R-PSSO-F3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 2.1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 140 MHz |
| Maximum off time (toff) | 355 ns |
| Maximum opening time (tons) | 55 ns |
| PBSS302NX,115 | PBSS302NX | |
|---|---|---|
| Description | 20 V, 5.3 A NPN low VCEsat (BISS) transistor | 20 V, 5.3 A NPN low VCEsat (BISS) transistor |
| Is it Rohs certified? | conform to | conform to |
| Maker | NXP | NXP |
| Parts packaging code | SOT-89 | SOT-89 |
| package instruction | PLASTIC, SMD, SC-62, 3 PIN | PLASTIC, SC-62, TO-243, 3 PIN |
| Contacts | 3 | 3 |
| Reach Compliance Code | compli | compli |
| ECCN code | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 5.3 A | 5.3 A |
| Collector-emitter maximum voltage | 20 V | 20 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 200 | 200 |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 |
| Polarity/channel type | NPN | NPN |
| Maximum power dissipation(Abs) | 2.1 W | 2.1 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin (Sn) | Tin (Sn) |
| Terminal form | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 30 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 140 MHz | 140 MHz |
| Maximum off time (toff) | 355 ns | 355 ns |
| Maximum opening time (tons) | 55 ns | 55 ns |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
