HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200612
Issued Date : 2006.07.01
Revised Date : 2006.07.11
Page No. : 1/4
H2301N
P-Channel Enhancement-Mode MOSFET (-20V, -2.2A)
H2301N Pin Assignment & Symbol
3
2
3-Lead Plastic
SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Source
1
Features
•
R
DS(on)
<100mΩ@V
GS
=-4.5V, I
D
=-2.8A
•
R
DS(on)
<150mΩ@V
GS
=-2.5V, I
D
=-2A
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Improved Shoot-Through FOM
Gate
Drain
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
*2
Parameter
Ratings
-20
±8
-2.2
-8
0.9
0.57
-55 to +150
140
Units
V
V
A
A
W
W
°C
°C/W
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in
2
2oz Cu PCB board
H2301N
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
•
Dynamic
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=-6V, R
L
=6Ω, I
D
=-1A,
V
GEN
=-4.5V, R
G
=6Ω
V
DS
=-6V, V
GS
=0V, f=1MHz
V
DS
=-6V, I
D
=-2.8A, V
GS
=-4.5V
-
-
-
-
-
-
-
-
-
-
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-9.6V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=-5V, I
D
=-4A
-20
-
-
-0.45
-
-
-
Characteristic
Test Conditions
Min.
Spec. No. : MOS200612
Issued Date : 2006.07.01
Revised Date : 2006.07.11
Page No. : 2/4
Typ.
Max.
Unit
-
69
83
-
-
-
6.5
-
100
V
mΩ
150
-0.95
-1
±100
-
V
uA
nA
S
15.23
5.49
2.74
882.51
145.54
97.26
17.28
3.73
36.05
6.19
-
-
-
-
-
-
-
-
-
-
nS
PF
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-0.75A
-
-
-
-0.8
-2.4
-1.2
A
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H2301N
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
Spec. No. : MOS200612
Issued Date : 2006.07.01
Revised Date : 2006.07.11
Page No. : 3/4
A
L
2 3 0 1
3
Pb Free Mark
B S
1
2
Pb-Free: " "
(Note)
Normal: None
Note: Pb-free product can distinguish by the
green label or the extra description on the
right side of the label.
Pin Style: 1.Gate 2.Source 3.Drain
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H2301N
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200612
Issued Date : 2006.07.01
Revised Date : 2006.07.11
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C
±5
o
C
Dipping time
10sec
±1sec
10sec
±1sec
H2301N
HSMC Product Specification
MEMS sensors
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