Polar
TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTP18N60PM
V
DSS
I
D25
R
DS(on)
= 600V
= 9A
≤
420mΩ
Ω
OVERMOLDED
(IXTP...M) OUTLINE
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
9
54
18
1
10
90
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Features
Plastic Overmolded Tab for Electrical
Isolation
International Standard Package
Low R
DS(on)
and Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
G = Gate
S = Source
D = Drain
G
DS
Isolated Tab
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
300
260
1.13 / 10
2.5
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
V
GS
= 10V, I
D
= 9A, Note 1
Characteristic Values
Min. Typ.
Max.
600
2.5
4.5
V
V
±100
nA
25
μA
250
μA
420 mΩ
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS99739G(10/10)
IXTP18N60PM
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 9A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 9A
R
G
= 5Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 9A, Note 1
Characteristic Values
Min. Typ.
Max.
9
16
2500
280
23
21
22
62
22
50
15
18
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.39
°C/W
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
1
2
3
OVERMOLDED TO-220
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= I
S
, V
GS
= 0V, -di/dt = 100A/μs
V
R
= 100V
500
Characteristic Values
Min. Typ.
Max.
18
54
1.5
A
A
V
ns
Note:
1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTP18N60PM
Fig. 1. Output Characteristics @ T
J
= 25ºC
18
16
14
V
GS
= 10V
8V
7V
40
35
30
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
7V
I
D
- Amperes
I
D
- Amperes
12
10
8
6
4
2
0
0
1
2
3
4
5
6V
25
20
6V
15
10
5V
5
0
6
7
8
0
5
10
15
5V
20
25
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
=125ºC
18
16
14
V
GS
= 10V
7V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 9A Value vs.
Junction Temperature
2.8
V
GS
= 10V
R
DS(on)
- Normalized
2.4
I
D
- Amperes
12
10
8
6V
I
D
= 18A
2.0
I
D
= 9A
1.6
5V
6
4
2
0
0
2
4
6
8
10
12
14
16
18
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 9A Value vs.
Drain Current
3.4
3.0
V
GS
= 10V
T
J
= 125ºC
10
9
8
7
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.6
I
D
- Amperes
T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
2.2
1.8
1.4
1.0
6
5
4
3
2
1
0.6
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXTP18N60PM
Fig. 7. Input Admittance
40
24
35
30
25
20
15
10
5
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
4
T
J
= 125ºC
25ºC
- 40ºC
20
25ºC
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
16
125ºC
12
8
0
0
4
8
12
16
20
24
28
32
36
40
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
70
10
9
60
8
50
7
V
DS
= 300V
I
D
= 9A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
40
30
6
5
4
3
2
1
20
10
0
0
0
5
10
15
20
25
30
35
40
45
50
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
10
Fig. 12. Maximum Transient Thermal Impedance
f
= 1MHz
Ciss
Capacitance - PicoFarads
Coss
100
Z
(th)JC
- ºC / W
30
35
40
1,000
1
0.1
Crss
10
0
5
10
15
20
25
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: F_18N60P(63)8-21-06-B
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