XSD215 datasheet, PDF - EEWORLD Datasheet

XSD215: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size267KB，2 Pages; ManufacturerSolitron Devices Inc.

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XSD215 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	Solitron Devices Inc.
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.2 W
surface mount	YES

	XSD215	XSD211	XSD212	XSD213	XSD214
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Maker	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	Single	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1.2 W	1.2 W	1.2 W	1.2 W	1.2 W
surface mount	YES	YES	YES	YES	YES

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