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XSD212

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size267KB,2 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric Compare View All

XSD212 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

XSD212 Parametric

Parameter NameAttribute value
MakerSolitron Devices Inc.
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.05 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.2 W
surface mountYES

XSD212 Related Products

XSD212 XSD211 XSD213 XSD214 XSD215
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Maker Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc.
Reach Compliance Code unknown unknown unknown unknown unknown
Configuration Single Single Single Single Single
Maximum drain current (Abs) (ID) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W
surface mount YES YES YES YES YES

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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