Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Parameter Name | Attribute value |
Maker | Solitron Devices Inc. |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 0.05 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 125 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 1.2 W |
surface mount | YES |
XSD212 | XSD211 | XSD213 | XSD214 | XSD215 | |
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Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
Maker | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
Configuration | Single | Single | Single | Single | Single |
Maximum drain current (Abs) (ID) | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W |
surface mount | YES | YES | YES | YES | YES |