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SMS190

Description
1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
Categorysemiconductor    Discrete semiconductor   
File Size201KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SMS190 Overview

1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB

SMS190 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, MELF-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingNOT SPECIFIED
Terminal locationEND
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage60 V
Maximum average forward current1 A
SMS120-SMS1A0
Surface Mount Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 ---
100
V
CURRENT:
1.0
A
Features
111
111
11
Plastic package has Underwriters Laborator
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250
o
C/10
1
seconds at terminals
D1
2.6± 0.15
DO - 213AB
SOLDERABLE ENDS
D2=D1
0
0.20
Built-in strain relief
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
Dimensions in millimeters
Mechanical Data
Case:JEDEC DO-213AB,molded plastic over
1111passivated
chip
Polarity: Color band denotes cathode end
Weight:
0.0046 ounces, 0.116 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
SMS120
SMS130 SMS140
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c
sine-w ave superimposed on rated load(JEDEC
c
Method)
Maximum instantaneous forw ard voltage at
v
1.0A(NOTE.1)
Maximum DC reverse current @T
A
=25
o
C
at rated DC blocking voltage(NOTE1) @T
A
=100
o
C
Typical thermal resitance (NOTE2)
Operating junction and storagetemperature range
Storage temperature range
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm
2
)copper pad areas
SMS160 SMS190 SMS1A0
UNITS
60
42
60
90
63
90
100
70
100
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JA
R
θ
JL
T
STG
T
J
20
14
20
30
21
30
40
28
40
1.0
30
0.5
0.5
0.7
0.79
V
mA
5.0
45
15
K
/W
o
-55--- +150
-55--- +150
C
C
o
http://www.luguang.cn
mail:lge@luguang.cn

SMS190 Related Products

SMS190 SMS120 SMS130 SMS140 SMS160 SMS1A0
Description 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
Number of terminals 2 2 2 2 2 2
Number of components 1 1 1 1 1 1
Processing package description ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2
Lead-free Yes Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape ROUND ROUND ROUND ROUND ROUND ROUND
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
surface mount Yes Yes Yes Yes Yes Yes
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal location END END END END END END
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE
Maximum repetitive peak reverse voltage 60 V 60 V 60 V 60 V 60 V 60 V
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A

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