SMS130 datasheet, PDF - EEWORLD Datasheet

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SMS130: Description1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB; Categorysemiconductor Discrete semiconductor; File Size201KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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SMS130 Overview

1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB

SMS130 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	ROHS COMPLIANT, PLASTIC, MELF-2
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
surface mount	Yes
Terminal form	WRAP AROUND
terminal coating	NOT SPECIFIED
Terminal location	END
Packaging Materials	PLASTIC/EPOXY
Craftsmanship	SCHOTTKY
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	SIGNAL DIODE
Maximum repetitive peak reverse voltage	60 V
Maximum average forward current	1 A

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SMS120-SMS1A0

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE: 20 ---

100

CURRENT:

1.0

Features

◇

111

◇

111

◇

Plastic package has Underwriters Laborator

Flammability Classification 94V-0

For surface mounted applications

Low profile package

Metal silicon junction, majority carrier conduction

High surge capability

High current capability,low forward voltage drop

Low power loss,high effciency

For use in low voltage high frequency inverters,free

wheeling and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:250

C/10

seconds at terminals

2.6± 0.15

DO - 213AB

SOLDERABLE ENDS

D2=D1

＋

－

0.20

Built-in strain relief

0.5± 0.1

4.9± 0.2

0.5± 0.1

Dimensions in millimeters

Mechanical Data

◇

Case:JEDEC DO-213AB,molded plastic over

1111passivated

chip

Polarity: Color band denotes cathode end

Weight:

0.0046 ounces, 0.116 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

C ambient temperature unless otherwise specified

SMS120

SMS130 SMS140

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ord rectified current at

(SEE FIG.1) (NOTE 2)

Peak forw ard surge current 8.3ms single half-

sine-w ave superimposed on rated load(JEDEC

Method)

Maximum instantaneous forw ard voltage at

1.0A(NOTE.1)

Maximum DC reverse current @T

=25

at rated DC blocking voltage(NOTE1) @T

=100

Typical thermal resitance (NOTE2)

Operating junction and storagetemperature range

Storage temperature range

NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle

2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm

)copper pad areas

SMS160 SMS190 SMS1A0

UNITS

100

RRM

RWS

(AV)

FSM

STG

1.0

0.5

0.7

0.79

5.0

-55--- +150

http://www.luguang.cn

mail:lge@luguang.cn

SMS130 Related Products

	SMS130	SMS120	SMS140	SMS160	SMS190	SMS1A0
Description	1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB	1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB	1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB	1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB	1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB	1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
Number of terminals	2	2	2	2	2	2
Number of components	1	1	1	1	1	1
Processing package description	ROHS COMPLIANT, PLASTIC, MELF-2	ROHS COMPLIANT, PLASTIC, MELF-2	ROHS COMPLIANT, PLASTIC, MELF-2	ROHS COMPLIANT, PLASTIC, MELF-2	ROHS COMPLIANT, PLASTIC, MELF-2	ROHS COMPLIANT, PLASTIC, MELF-2
Lead-free	Yes	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
surface mount	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal location	END	END	END	END	END	END
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Craftsmanship	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	SIGNAL DIODE	SIGNAL DIODE	SIGNAL DIODE	SIGNAL DIODE	SIGNAL DIODE	SIGNAL DIODE
Maximum repetitive peak reverse voltage	60 V	60 V	60 V	60 V	60 V	60 V
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A

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