T10C
SIDACtor®
Device
RoHS
The bi-directional T10C devices are a through-hole technology
SIDACtor
protector. It is
intended for cost-sensitive telecommunication applications. The three-terminal configuration
matches G.D.T. pin configuration; for plug-in applications, the T10C fits in the KRONE™
three-point connector block (5B).
This T10
SIDACtor
series enables equipment to comply with various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-
968-A (formerly known as FCC Part 68).
For primary protection applications, integrated failsafe options are available.
Electrical Parameters
pF
Pin 1-2 / 3-2
Tip-Ground, Ring-Ground
TYP
110
110
90
90
83
83
77
77
74
74
68
68
pF
Pin 1-3
Tip-Ring
TYP
61
61
51
51
48
48
44
44
42
42
38
38
1
(T)
3
(R)
2
(G)
Part
Number *
T10C080B
T10C080E
T10C110B
T10C110E
T10C140B
T10C140E
T10C180B
T10C180E
T10C220B
T10C220E
T10C270B
T10C270E
V
DRM
@ 5 µA
Volts
80
80
105
105
140
140
175
175
214
214
270
270
V
S
Volts
120
120
135
135
170
170
210
210
265
265
360
360
V
T
Volts
4
4
4
4
4
4
4
4
4
4
4
4
I
S
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
I
H
mAmps
120
180
120
180
120
180
120
180
120
180
120
180
*
For failsafe option, add “F” at end of part number.
See Section 9, “Mechanical Data” for mechanical view of failsafe option.
For surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• Listed
SIDACtor
devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• V
DRM
is measured at I
DRM
across Pins 1-2 / 3-2.
• V
S
is measured at 0.5 V/µs across Pins 1-2 / 3-2.
• Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
Surge Ratings in Amps
I
PP
8x20 *
1.2x50 **
Series
C
* Current waveform in µs
** Voltage waveform in µs
Amps
250
5x310 *
10x700 **
Amps
125
10x1000 *
10x1000 **
Amps
100
I
TSM
50 / 60 Hz
Amps
50
di/dt
Amps/µs
100
Telecom Design Guide • © 2006 Littelfuse
3 - 29
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SIDACtor Devices
T10C SIDACtor® Device
Thermal Considerations
Package
[T10C]
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
150
-40 to +150
60
Unit
°C
°C
°C/W
+I
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
S
I
H
I
DRM
-V
V
T
V
DRM
V
S
+V
100
Peak
Value
Waveform = t
r
x t
d
50
Half Value
0
0
t
r
t
d
t – Time (µs)
-I
V-I Characteristics
t
r
x t
d
Pulse Waveform
14
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse • Telecom Design Guide
Microcontroller MCU
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