33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
Features
Sub-Harmonic Receiver
9.0 dB Conversion Gain
4.0 dB Noise Figure
12.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
R1001
R1001
General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC receiver has a small
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0
dB image rejection across the band. The device is a two stage LNA
followed by a pair of sub-harmonic mixers, configured to form an image
reject mixer which requires an LO at 15.5-21.5 GHz. The image reject
mixer eliminates the need for a bandpass filter after the LNA to remove
thermal noise at the image frequency. The use of a sub-harmonic mixer
makes the provision of the LO easier than for fundamental mixers at
these frequencies. I and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband’s 0.15
µm
GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
70 mA
+0.3 VDC
0 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21) (USB/LSB)
2
LO Input Drive (P
LO
)
Image Rejection (USB/LSB)
2
Noise Figure (NF)
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)
1
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
(1) Measured using constant current.
(2) Min/Max limits over 33.0-39.5 GHz
Page 1 of 8
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
mA
Min.
34.0
33.0
15.5
DC
-
3.0/3.0
+10.0
10.0/6.0
-
-
-
-
-1.0
-
Typ.
-
-
-
-
18.0
9.0/9.0
+12.0
14.0/12.0
4.0
45.0
-13.0
+3.0
-0.5
30
Max.
40.0
40.0
21.5
3.0
-
-
+14.0
-
-
-
-
+5.5
0.0
60
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
R1001
Receiver Measurements
XR1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
14
XR1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
14
Conversion Gain (dB)
Conversion Gain (dB)
12
10
8
6
4
2
0
35
36
37
38
RF Frequency (GHz)
Max
Median
Mean
-3sigma
39
40
41
12
10
8
6
4
2
0
35
36
37
38
RF Frequency (GHz)
Max
Median
Mean
-3sigma
39
40
41
XR1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
0
-2
0
-2
XR1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
Image Rejection (dBc)
Image Rejection (dBc)
-4
-6
-8
-4
-6
-8
-10
-12
-14
-16
-18
-20
35
36
37
38
Frequency (GHz)
+3sigma
Max
Median
Mean
-3sigma
39
40
41
-10
-12
-14
-16
-18
-20
35
36
37
38
RF Frequency (GHz)
Max
Median
Mean
-3sigma
39
40
41
XR1001 Vd=3.0 V Id=30 mA
RF Return Loss (dB)
0
Noise Figure (dB)
-5
-10
-15
-20
-25
-30
36.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
5.00
4.00
3.00
2.00
1.00
0.00
36.0
36.5
XR1001 Vd=3.0 V Id=30 mA
37.0
37.7
38.0
38.5
39.0
39.5
40.0
Frequency (GHz)
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
R1001
Receiver Measurements (cont.)
XR1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30.5
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30.5
XR1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
Conversion Gain (dB)
Conversion Gain (dB)
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Max
RF Frequency (GHz)
Median
Mean
-3sigma
XR1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
Image Rejection (dBc)
XR1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
Image Rejection (dBc)
-5
-5
-10
-10
-15
-15
-20
-20
-25
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
-25
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Max
RF Frequency (GHz)
Median
Mean
-3sigma
XR1001 Vd=3.0 V, Id=30 mA, USB/LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
RF Return Loss (dB)
-5
-10
-15
-20
-25
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
R1001
0.541
(0.021)
2
Mechanical Drawing
2.500
(0.099)
1.143
(0.045)
3
R1001
1.285
(0.051)
1
4
0.315
(0.012)
0.0
0.0
6
5
0.541
(0.021)
1.143
(0.045)
2.900
(0.114)
(Note: Engineering designator is 38REC_01B2)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.500 mg.
Bond Pad #1 (RF)
Bond Pad #2 (IF2)
Bond Pad #3 (IF1)
Bond Pad #4 (LO)
Bond Pad #5 (Vd)
Bond Pad #6 (Vg)
Bypass Capacitors
- See App Note [2]
Bias Arrangement
IF2
2
IF1
3
IF2
IF1
R1001
RF
1
RF
LO
4
6
5
LO
Vg
Vd
Vg
Vd
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
R1001
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with both stages in parallel,
and can be biased for low noise performance or high power performance. Low noise bias is nominally
Vd=3V, Id=30mA and is the recommended bias condition. Power bias may be as high as Vd=5.5V, Id=60mA.
It is also recommended to use active biasing to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do
this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note:
RF and IF ports are AC coupled (DC blocks on chip), LO port is DC coupled (no DC block on chip.)
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
84 deg Celsius
104 deg Celsius
124 deg Celsius
Rth
MTTF Hours
FITs
-
318.0° C/W
-
7.63E+11
4.79E+10
3.95E+09
1.31E-03
2.09E-02
2.53E-01
Bias Conditions:
Vd=3.0V, Id=30 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
159 deg Celsius
179 deg Celsius
199 deg Celsius
Rth
MTTF Hours
FITs
-
314.8° C/W
-
1.39E+08
2.09E+07
3.67E+06
7.18E+00
4.79E+01
2.72E+02
Bias Conditions:
Vd=5.5V, Id=60 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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