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UTV120

Description
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 55JT, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size265KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UTV120 Overview

RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 55JT, 8 PIN

UTV120 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instruction55JT, 8 PIN
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage28 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F8
JESD-609 codee0
Number of components2
Number of terminals8
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
UTV120
12 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 120 is a COMMON EMITTER transistor capable of providing 12
Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55JT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVceo
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
80 Watts
45 Volts
28 Volts
4 Volts
3.5 Amps
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
IMD
1
VSWR
1
CHARACTERISTICS
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
TEST CONDITIONS
F = 470 - 860 MHz
Vcc = 26.5 Volts
Ic = 1.7 Amps
Pref = 12 Watts
F = 860 MHz
MIN
12
1.55
8.9
9.5
-52
3:1
TYP
MAX
UNITS
Watts
Watts
dB
dB
Collector to Emitter
28
Ic = 65 mA
Breakdown
45
Ic = 25 mA
Collector to Base Breakdown
4
Ie = 10 mA
Emitter to Base Breakdown
10
Vce = 5 V, 500 mA
Current Gain
Vcb = 26 V, F = 1
Output Capacitance
MHz
Thermal Resistance
Tc = 25
o
C
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Note 2: Per side
Initial Issue June, 1994
LVceo
2
BVces
2
BVebo
2
h
FE2
Cob
2
θjc
Volts
Volts
Volts
23
1.6
o
pF
C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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