SH8K5TB datasheet, PDF - EEWORLD Datasheet

SH8K5TB: DescriptionPower Field-Effect Transistor, 3.5A I(D), 30V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; CategoryDiscrete semiconductor The transistor; File Size170KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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SH8K5TB Overview

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
parentfamilyid	2403141
Maker	ROHM Semiconductor
Objectid	2104962302
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
compound_id	2413063
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	3.5 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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