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2N2156

Description
Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36
CategoryDiscrete semiconductor    The transistor   
File Size87KB,1 Pages
ManufacturerCentral Semiconductor
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2N2156 Overview

Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36

2N2156 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)30 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-36
JESD-609 codee0
Number of components1
Maximum operating temperature110 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)170 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)0.002 MHz
Base Number Matches1

2N2156 Related Products

2N2156 2N2158 2N2154 2N2153 2N2152
Description Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36, Power Bipolar Transistor, 30A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code _compli _compli _compli unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 30 A 30 A 30 A 30 A 30 A
Collector-emitter maximum voltage 30 V 60 V 60 V 45 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 25 25 25
JEDEC-95 code TO-36 TO-36 TO-36 TO-36 TO-36
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Maximum operating temperature 110 °C 110 °C 110 °C 110 °C 110 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 170 W 170 W 170 W 170 W 170 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 0.002 MHz 0.002 MHz 0.002 MHz 0.002 MHz 0.002 MHz
Base Number Matches 1 1 1 - -
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