Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 30 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-36 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Maximum operating temperature | 110 °C |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 170 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 0.002 MHz |
| Base Number Matches | 1 |
| 2N2154 | 2N2158 | 2N2156 | 2N2153 | 2N2152 | |
|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36, | Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 | Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 | Power Bipolar Transistor, 30A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 | Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | _compli | _compli | _compli | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 30 A | 30 A | 30 A | 30 A | 30 A |
| Collector-emitter maximum voltage | 60 V | 60 V | 30 V | 45 V | 30 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 25 | 40 | 40 | 25 | 25 |
| JEDEC-95 code | TO-36 | TO-36 | TO-36 | TO-36 | TO-36 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 110 °C | 110 °C | 110 °C | 110 °C | 110 °C |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 170 W | 170 W | 170 W | 170 W | 170 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 0.002 MHz | 0.002 MHz | 0.002 MHz | 0.002 MHz | 0.002 MHz |
| Base Number Matches | 1 | 1 | 1 | - | - |
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