2N2152 datasheet, PDF - EEWORLD Datasheet

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2N2152: DescriptionPower Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36; CategoryDiscrete semiconductor The transistor; File Size87KB，1 Pages; ManufacturerCentral Semiconductor

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2N2152 Overview

Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36

2N2152 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-36
JESD-609 code	e0
Number of components	1
Maximum operating temperature	110 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	170 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	0.002 MHz

2N2152 Related Products

	2N2152	2N2158	2N2156	2N2154	2N2153
Description	Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36	Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36	Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36	Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36,	Power Bipolar Transistor, 30A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-36
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	_compli	_compli	_compli	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	30 A	30 A	30 A	30 A	30 A
Collector-emitter maximum voltage	30 V	60 V	30 V	60 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	40	40	25	25
JEDEC-95 code	TO-36	TO-36	TO-36	TO-36	TO-36
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Maximum operating temperature	110 °C	110 °C	110 °C	110 °C	110 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	170 W	170 W	170 W	170 W	170 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	0.002 MHz	0.002 MHz	0.002 MHz	0.002 MHz	0.002 MHz
Base Number Matches	-	1	1	1	-

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