12 A, 50 V, SILICON, RECTIFIER DIODE
Parameter Name | Attribute value |
Maker | SEMIKRON |
package instruction | O-PALF-W2 |
Contacts | 2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
application | GENERAL PURPOSE |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JESD-30 code | O-PALF-W2 |
Maximum non-repetitive peak forward current | 280 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -50 °C |
Maximum output current | 12 A |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | LONG FORM |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 50 V |
surface mount | NO |
technology | SCHOTTKY |
Terminal form | WIRE |
Terminal location | AXIAL |
SB1250 | SB12100 | SB1220 | SB1230 | SB1240 | SB1245 | SB1260 | SB1290 | |
---|---|---|---|---|---|---|---|---|
Description | 12 A, 50 V, SILICON, RECTIFIER DIODE | 12 A, 100 V, SILICON, RECTIFIER DIODE | 12 A, 20 V, SILICON, RECTIFIER DIODE | 12 A, 30 V, SILICON, RECTIFIER DIODE | RECTIFIER DIODE | 12 A, 45 V, SILICON, RECTIFIER DIODE | 12 A, 60 V, SILICON, RECTIFIER DIODE | 12 A, 90 V, SILICON, RECTIFIER DIODE |
Maker | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON |
package instruction | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
Contacts | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 code | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
Maximum non-repetitive peak forward current | 280 A | 280 A | 280 A | 280 A | 280 A | 280 A | 280 A | 280 A |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -50 °C | -50 °C | -50 °C | -50 °C | -50 °C | -50 °C | -50 °C | -50 °C |
Maximum output current | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 50 V | 100 V | 20 V | 30 V | 40 V | 45 V | 60 V | 90 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |