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MT18VDDF3272Y-262XX

Description
DDR DRAM Module, 32MX72, CMOS, MO-206, DIMM-184
Categorystorage    storage   
File Size448KB,27 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT18VDDF3272Y-262XX Overview

DDR DRAM Module, 32MX72, CMOS, MO-206, DIMM-184

MT18VDDF3272Y-262XX Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeDIMM
package instructionDIMM,
Contacts184
Reach Compliance Codecompliant
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N184
JESD-609 codee4
memory density2415919104 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
ADVANCE
256MB, 512MB (x72, ECC)
184-PIN REGISTERED DDR SDRAM DIMM
REGISTEREDDDR
SDRAM DIMM
Features
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates PC1600, PC2100, or PC2700
• Utilizes 200 MT/s, 266 MT/s, and 333 MT/s DDR
SDRAM components
• Registered Inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• ECC, 1-bit error detection and correction
• 256MB (32 Meg x 72) and 512MB (64 Meg x 72)
• V
DD
= V
DD
Q = +2.5V
• V
DDSPD
= +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received
with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 15.625µs (256MB), 7.8125µs (512MB) maximum
average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
MT18VDDF3272 – 256MB
MT18VDDF6472 – 512MB
For the latest data sheet, please refer to the Micron Web
site:
www.micron.com/moduleds
Figure 1: 184-Pin DIMM – MO-206
OPTIONS
MARKING
• Package
184-pin DIMM (gold)
• Frequency/CAS Latency
1
6ns/166MHz,(333MT/s)
7.5ns/133 MHz (266 MT/s)
7.5ns/133 MHz (266 MT/s)
7.5ns/133 MHz (266 MT/s)
10ns/100 MHz (200 MT/s)
NOTE:
G
CL = 2.5
CL = 2
CL = 2
CL = 2.5
CL = 2
-335
-262
-26A
-265
-202
1. Registered Mode will add one clock cycle to CL.
Table 1:
Address Table
256MB
512MB
4K
8K
Refresh Count
4K (A0–A11)
8K (A0–A12)
Row Addressing
4 (BA0, BA1)
4 (BA0, BA1)
Device Bank Addressing
32 Meg x 4
64 Meg x 4
Device Configuration
2K (A0–A9, A11) 2K (A0–A9, A11)
Column Addressing
1 (S0#)
1 (S0#)
Module Rank Addressing
32, 64 Meg x 72 DDR SDRAM DIMMs
DDF18C32_64x72G_B.fm - Rev. B 8/03 EN
1
©2003 Micron Technology, Inc. All rights reserved.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

MT18VDDF3272Y-262XX Related Products

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Description DDR DRAM Module, 32MX72, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.7ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.8ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.75ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.75ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.75ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.75ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.75ns, CMOS, MO-206, DIMM-184 DDR DRAM Module, 32MX72, 0.8ns, CMOS, MO-206, DIMM-184
Is it lead-free? Lead free Contains lead Contains lead Contains lead Contains lead Contains lead Lead free Contains lead Lead free Lead free
Is it Rohs certified? conform to incompatible incompatible incompatible incompatible incompatible conform to incompatible conform to conform to
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184 MO-206, DIMM-184
Contacts 184 184 184 184 184 184 184 184 184 184
Reach Compliance Code compliant unknown compliant compliant compliant unknown compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184
memory density 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bi
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72 72 72 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1 1
Number of terminals 184 184 184 184 184 184 184 184 184 184
word count 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words
character code 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 235 235 235 235 235 260 235 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES YES YES YES YES YES
Maximum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount NO NO NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 30 30 30 30 30 30
Maximum access time - - 0.7 ns 0.8 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.8 ns
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