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USF24

Description
Rectifier Diode, 1 Element, 2A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

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USF24 Overview

Rectifier Diode, 1 Element, 2A, 200V V(RRM),

USF24 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
Maximum non-repetitive peak forward current75 A
Number of components1
Maximum operating temperature150 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.02 µs
surface mountNO
BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
USF21 --- USF24
VOLTAGE RANGE: 50 --- 200 V
CURRENT: 2.0 A
SUPER FAST RECTIFIER
DO - 15
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
USF21
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
USF22
100
70
100
2.0
USF23
150
105
150
USF24
200
140
200
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
75.0
A
Maximum instantaneous forw ard voltage
@ 2.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
10.0
350.0
20
15
40
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264029
BL
GALAXY ELECTRICAL
1
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