SD215DE/R datasheet, PDF - EEWORLD Datasheet

SD215DE/R: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size115KB，2 Pages; ManufacturerUniversal Semiconductor Inc

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SD215DE/R Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN

Parameter Name	Attribute value
Maker	Universal Semiconductor Inc
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW THRESHOLD
Shell connection	SUBSTRATE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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