P6SMB400AHE3/5B datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> diode> P6SMB400AHE3/5B

P6SMB400AHE3/5B: DescriptionTrans Voltage Suppressor Diode, 600W, 342V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size91KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

Download Datasheet Parametric Compare View All

P6SMB400AHE3/5B Overview

Trans Voltage Suppressor Diode, 600W, 342V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

P6SMB400AHE3/5B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	420 V
Minimum breakdown voltage	380 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	342 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40

Preview

Download Datasheet

View All

P6SMB Series

www.vishay.com

Vishay General Semiconductor

Surface Mount T

RANS

ORB®

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

DO-214AA (SMB)

PRIMARY CHARACTERISTICS

(uni-directional)

(bi-directional)

PPM

FSM

(uni-directional only)

max.

Polarity

Package

5.8 V to 459 V

6.8 V to 540 V

6.8 V to 220 V

600 W

5.0 W

100 A

150 °C

Uni-directional, bi-directional

DO-214AA (SMB)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MECHANICAL DATA

Case:

DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant and commercial grade

Base P/NHE3 - RoHS compliant and AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity:

For uni-directional types the band denotes

cathode end, no marking on bi-directional types

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. P6SMB10CA).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS

= 25 °C unless otherwise noted)

PARAMETER

Peak power dissipation with a 10/1000 μs waveform

(1)(2)

(fig. 1)

Peak pulse current with a 10/1000 μs waveform

(1)

Power dissipation on infinite heatsink at T

= 50 °C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

(2)

Operating junction and storage temperature range

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.

(2)

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

Revision: 14-Dec-12

Document Number: 88370

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SYMBOL

PPM

FSM

, T

STG

VALUE

600

See next table

5.0

100

- 65 to + 150

UNIT

°C

P6SMB400AHE3/5B Related Products

	P6SMB400AHE3/5B	P6SMB480AHE3/52	P6SMB350AHE3/5B	P6SMB540AHE3/5B	P6SMB300AHE3/52	P6SMB300AHE3/5B	P6SMB440AHE3/5B
Description	Trans Voltage Suppressor Diode, 600W, 342V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	Trans Voltage Suppressor Diode, 600W, 408V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	Trans Voltage Suppressor Diode, 600W, 300V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	Trans Voltage Suppressor Diode, 600W, 459V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	Trans Voltage Suppressor Diode, 600W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	Trans Voltage Suppressor Diode, 600W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	Trans Voltage Suppressor Diode, 600W, 376V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay
package instruction	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Maximum breakdown voltage	420 V	504 V	368 V	567 V	315 V	315 V	462 V
Minimum breakdown voltage	380 V	456 V	333 V	513 V	285 V	285 V	418 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
JESD-609 code	e3	e3	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1	1	1
Maximum non-repetitive peak reverse power dissipation	600 W	600 W	600 W	600 W	600 W	600 W	600 W
Number of components	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	5 W	5 W	5 W	5 W	5 W	5 W	5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	342 V	408 V	300 V	459 V	256 V	256 V	376 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40	40

Recommended Resources

Vishay FRED Pt® ultra-fast recovery rectifier launched on the market

Switching power supply circuit composed of TL494 integrated circuit

Automatic light control lighting circuit three

Single switch multi-light control circuit (2)

Wireless walkie-talkie additional ultra-low waiting current device circuit diagram

Homemade gunshot simulation generator circuit

RISC-V MCU Development (VIII): Project Management: Compared with integrated development environments such as KEIL and Visual Studio, various RISC-V IDEs developed based on the Eclipse platform do not support loading projects or solutions (project sets...; Moiiiiilter MCU

Infrared remote control: Information found on the Internet This infrared remote control sends 32 codes at a time, 9ms high level and 4.5ms low level, followed by 8-bit address code, 8-bit address inverse code, 8-bit command c...; sky999 MCU

[ART-Pi Review] 6: OTA connection to onenet cloud platform: [i=s]This post was last edited by Digital Leaf on 2021-8-8 22:23[/i]OneNET platform is an ecological platform built by China Mobile based on the Internet of Things industry. It can adapt to a variety ...; 数码小叶 Real-time operating system RTOS

Job Opportunity Recommendation - Product Development Engineer (Relay): [i=s]This post was last edited by aggie_liang on 2021-7-29 19:21[/i]job description : 1. Ensure engineer tasks and on-time delivery in new product development projects, program implementation and plan...; aggie_liang Recruitment

Differences between SMBus and I2C: [size=4]Differences between SMBus and I2C[/size] [size=4] [/size] [size=4] There are some differences in timing characteristics between SMBus and I2C buses. First, SMBus requires a certain data hold t...; 灞波儿奔 Wireless Connectivity

DSP Image Data Flow Design: DSP applications are mainly divided into three parts: acquisition, processing and display. First, acquisition means that the application layer calls the DSP bottom-level driver function user_read_upp_...; Aguilera DSP and ARM Processors

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components