CY7C1019D-10ZXI datasheet, PDF

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CY7C1019D-10ZXI: DescriptionStandard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32; Categorystorage storage; File Size196KB，9 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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CY7C1019D-10ZXI Overview

Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32

CY7C1019D-10ZXI Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Cypress Semiconductor
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP32,.46
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	20.95 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.003 A
Minimum standby current	4.5 V
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20
width	10.16 mm

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PRELIMINARY

CY7C1019D

1-Mbit (128K x 8) Static RAM

Features

• Pin- and function-compatible with CY7C1019B

• High speed

— t

= 10 ns

• CMOS for optimum speed/power

• Low active power

— I

= 60 mA @ 10 ns

• Low CMOS standby power

— I

SB2

= 1.2 mA (‘L’ Version only)

• Data Retention at 2.0V

• Center power/ground pinout

• Automatic power-down when deselected

• Easy memory expansion with CE and OE options

• Functionally equivalent to CY7C1019B

• Available in Pb-Free Packages

Functional Description

[1]

The CY7C1019D is a high-performance CMOS static RAM

organized as 131,072 words by 8 bits. Easy memory

expansion is provided by an active LOW Chip Enable (CE), an

active LOW Output Enable (OE), and tri-state drivers. This

device has an automatic power-down feature that significantly

reduces power consumption when deselected.

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the eight

I/O pins (I/O

through I/O

) is then written into the location

specified on the address pins (A

through A

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

The eight input/output pins (I/O

through I/O

) are placed in a

high-impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE LOW, and WE LOW).

The CY7C1019D is available in standard 32-pin TSOP Type

II and 400-mil-wide SOJ Pb-Free packages.

Logic Block Diagram

Pin Configurations

SOJ /TSOPII

Top View

I/O

INPUT BUFFER

I/O

ROW DECODER

I/O

SENSE AMPS

512 x 256 x 8

ARRAY

I/O

COLUMN

DECODER

POWER

DOWN

I/O

Note:

1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.

Cypress Semiconductor Corporation

Document #: 38-05464 Rev. *C

•

3901 North First Street

•

San Jose

CA 95134

•

408-943-2600

Revised January 11, 2005

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Description	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, LEAD FREE, TSOP2-32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, LEAD FREE, TSOP2-32
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor
Parts packaging code	TSOP2	TSOP2	TSOP2	SOJ	SOJ	SOJ	TSOP2
package instruction	TSOP2, TSOP32,.46	TSOP2, TSOP32,.46	TSOP2, TSOP32,.46	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	TSOP2, TSOP32,.46
Contacts	32	32	32	32	32	32	32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	10 ns	12 ns	10 ns	12 ns	12 ns	10 ns	12 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-G32
JESD-609 code	e3	e3	e3	e4	e4	e4	e3
length	20.95 mm	20.95 mm	20.95 mm	20.955 mm	20.955 mm	20.955 mm	20.95 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Humidity sensitivity level	3	3	3	3	3	3	3
Number of functions	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	SOJ	SOJ	SOJ	TSOP2
Encapsulate equivalent code	TSOP32,.46	TSOP32,.46	TSOP32,.46	SOJ32,.44	SOJ32,.44	SOJ32,.44	TSOP32,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	3.7592 mm	3.7592 mm	3.7592 mm	1.2 mm
Maximum standby current	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.06 mA	0.05 mA	0.06 mA	0.05 mA	0.05 mA	0.06 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	J BEND	J BEND	J BEND	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	20	20	20	20	20	20	20
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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