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Datasheet> All Categories > storage> storage> CY7C1019D-12ZXI
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CY7C1019D-12ZXI

Description
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, LEAD FREE, TSOP2-32
Categorystorage    storage   
File Size196KB，9 Pages
ManufacturerCypress Semiconductor
Environmental Compliance  
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CY7C1019D-12ZXI Overview

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, LEAD FREE, TSOP2-32

CY7C1019D-12ZXI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCypress Semiconductor
Parts packaging codeTSOP2
package instructionTSOP2, TSOP32,.46
Contacts32
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee3
length20.95 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP32,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.003 A
Minimum standby current4.5 V
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width10.16 mm

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Download Datasheet
PRELIMINARY
CY7C1019D
1-Mbit (128K x 8) Static RAM
Features
• Pin- and function-compatible with CY7C1019B
• High speed
— t
AA
= 10 ns
• CMOS for optimum speed/power
• Low active power
— I
CC
= 60 mA @ 10 ns
• Low CMOS standby power
— I
SB2
= 1.2 mA (‘L’ Version only)
• Data Retention at 2.0V
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Functionally equivalent to CY7C1019B
• Available in Pb-Free Packages
Functional Description
[1]
The CY7C1019D is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight
I/O pins (I/O
0
through I/O
7
) is then written into the location
specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019D is available in standard 32-pin TSOP Type
II and 400-mil-wide SOJ Pb-Free packages.
Logic Block Diagram
Pin Configurations
SOJ /TSOPII
Top View
A
0
A
1
A
2
A
3
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
512 x 256 x 8
ARRAY
I/O
3
I/O
4
I/O
5
CE
I/O
0
I/O
1
V
CC
V
SS
I/O
2
I/O
3
WE
A
4
A
5
A
6
A
7
CE
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
16
A
15
A
14
A
13
OE
I/O
7
I/O
6
V
SS
V
CC
I/O
5
I/O
4
A
12
A
11
A
10
A
9
A
8
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Cypress Semiconductor Corporation
Document #: 38-05464 Rev. *C
•
3901 North First Street
•
San Jose
,
CA 95134
•
408-943-2600
Revised January 11, 2005

CY7C1019D-12ZXI Related Products

CY7C1019D-12ZXI CY7C1019D-12ZXC CY7C1019D-10ZXC CY7C1019D-12VXC CY7C1019D-12VXI CY7C1019D-10VXC CY7C1019D-10ZXI
Description Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, LEAD FREE, TSOP2-32 Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, LEAD FREE, TSOP2-32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32 Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32 Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, SOJ-32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
Parts packaging code TSOP2 TSOP2 TSOP2 SOJ SOJ SOJ TSOP2
package instruction TSOP2, TSOP32,.46 TSOP2, TSOP32,.46 TSOP2, TSOP32,.46 SOJ, SOJ32,.44 SOJ, SOJ32,.44 SOJ, SOJ32,.44 TSOP2, TSOP32,.46
Contacts 32 32 32 32 32 32 32
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Maximum access time 12 ns 12 ns 10 ns 12 ns 12 ns 10 ns 10 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-G32
JESD-609 code e3 e3 e3 e4 e4 e4 e3
length 20.95 mm 20.95 mm 20.95 mm 20.955 mm 20.955 mm 20.955 mm 20.95 mm
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8
Humidity sensitivity level 3 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 70 °C 85 °C 70 °C 85 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 SOJ SOJ SOJ TSOP2
Encapsulate equivalent code TSOP32,.46 TSOP32,.46 TSOP32,.46 SOJ32,.44 SOJ32,.44 SOJ32,.44 TSOP32,.46
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 3.7592 mm 3.7592 mm 3.7592 mm 1.2 mm
Maximum standby current 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.05 mA 0.05 mA 0.06 mA 0.05 mA 0.05 mA 0.06 mA 0.06 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING J BEND J BEND J BEND GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 20 20 20 20 20 20 20
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm

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