S29CD016J0MFAI113 datasheet, PDF

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S29CD016J0MFAI113: DescriptionFlash, 512KX32, 54ns, PBGA80, BGA-80; Categorystorage storage; File Size1MB，86 Pages; ManufacturerCypress Semiconductor

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S29CD016J0MFAI113 Overview

Flash, 512KX32, 54ns, PBGA80, BGA-80

S29CD016J0MFAI113 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
package instruction	BGA-80
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	54 ns
Other features	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B80
JESD-609 code	e0
length	13 mm
memory density	16777216 bit
Memory IC Type	FLASH
memory width	32
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	16,30
Number of terminals	80
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX32
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA80,8X10,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	1.8/2.6,2.6 V
Programming voltage	2.7 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.4 mm
Department size	2K,16K
Maximum standby current	0.00006 A
Maximum slew rate	0.09 mA
Maximum supply voltage (Vsup)	2.75 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
switch bit	YES
type	NOR TYPE
width	11 mm

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S29CD032J

S29CD016J

S29CL032J

S29CL016J

32/16 Mbit, 2.6/3.3 V, Dual Boot,

Simultaneous Read/Write, Burst Flash

General Description

The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-

mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,

using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V

of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.

Distinctive Characteristics



110 nm Floating Gate Technology



Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/erase



Simultaneous Read/Write operation with zero latency



x32 Data Bus



Dual Boot Sector Configuration (top and bottom)



Flexible Sector Architecture

– CD016J and CL016J: Eight 2k Double word, Thirty 16k Double

word, and Eight 2k Double Word sectors

– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k

Double Word, and Eight 2k Double Word sectors



VersatileI/O™ control (1.65V to 3.6V)



Programmable Burst Interface

– Linear for 2, 4, and 8 double word burst with wrap around



Secured Silicon Sector that can be either factory or customer locked



20 year data retention (typical)



Cycling Endurance: 1 million write cycles per sector (typical)



Command set compatible with JEDEC (JC42.4) standard



Supports Common Flash Interface (CFI)



Extended Temperature range



Persistent and Password methods of Advanced Sector Protection



Unlock Bypass program command to reduce programming time



ACC input pin to reduce factory programming time



Data Polling bits indicate program and erase operation completion



Hardware (WP#) protection of two outermost sectors in the large

bank



Ready/Busy (RY/BY#) output indicates data available to system



Suspend and Resume commands for Program and Erase Operation



Offered Packages

– 80-pin PQFP

– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)

– Pb-free package option available

– Known Good Die

Performance Characteristics

Read Access Times

Speed Option (MHz)

Max Asynch. Access Time, ns (t

ACC

)

Max Synch. Burst Access, ns (t

BACC

)

Min Initial Clock Delay (clock cycles)

Max CE# Access Time, ns (t

)

Max OE# Access time, ns (t

)

(32 Mb only)

Typical Program and Erase Times

Double Word Programming

Sector Erase

18 µs

1.0 s

Current Consumption (Max values)

Continuous Burst Read @ 75 MHz

Program

Erase

Standby Mode

90 mA

50 mA

60 µA

Notice for the 32Mb S29CD-J and S29CL-J devices only:

Please refer to the application note “Recommended

Mode of Operation for Spansion

110 nm S29CD032J/S29CL032J Flash

Memory”

publication number

S29CD-CL032J_Recommend_AN

for programming best practices.

Cypress Semiconductor Corporation

Document Number: 002-00948 Rev. *A

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised December 16, 2015

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