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ES1B

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size176KB,9 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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ES1B Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

ES1B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
Reach Compliance Codeunknow
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage100 V
surface mountYES
Base Number Matches1
ES1A thru ES1G
Surface Mount Glass Passivated Super Fast Rectifiers
Reverse Voltage 50 to 400V Forward Current 1.0A
FEATURES
* Plastic package has Underwriters Laboratory
*
*
*
*
*
*
*
*
Flammability Classification 94V-0
High temperature metallurgically
bonded construction
For use in high frequency rectifier circuits
Fast switching for high efficiency
Cavity-free glass passivated junction
Capable of meeting environmental standards
of MIL-S-19500
1.0 A operation at TA=75°C with no thermal runaway
Typical IR less than 1.0µA
High temperature soldering guaranteed:
260°C/10 seconds
Mechanical Data
Case:
JEDEC DO-214AC, molded plastic over glass die
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.0023 oz., 0.065 g
Handling precautin:None
We declare that the material of product compliance
with ROHS requirements
1.Electrical Characteristic
Maximum & Thermal Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
T
= 110°C
symbol
V
RRM
V
RMS
V
DC
IF(AV)
ES1A
50
35
50
ES1B
100
70
100
ES1C
150
105
150
1.0
30
55
–50
to +150
ES1D
200
140
200
ES1G
400
280
400
Unit
V
V
V
A
A
°C/W
°C
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Typical thermal resistance (Note 2)
RθJA
TJ,
Operating junction and storage temperature range
TSTG
Electrical Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Maximum instantaneous forward voltage at 0.6A
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TA = 100°C
Typical reverse recovery time (Note 1)
Typical junction capacitance at 4.0V, 1MHz
NOTES:
1. IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. 8.0mm2 (.013mm thick) land areas
symbol ES1A
V
F
IR
trr
CJ
ES1B
ES1C
ES1D
ES1G
-
1.25
5.0
200
20
10.0
Unit
V
V
µA
ns
PF
0.90
0.98

ES1B Related Products

ES1B ES1A ES1C ES1D ES1G
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknow unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V 0.9 V 0.9 V 1.25 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 100 V 50 V 150 V 200 V 400 V
surface mount YES YES YES YES YES
Maker LRC LRC - LRC -
Is Samacsys N - N N N
Base Number Matches 1 - 1 1 1

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