ES1A datasheet, PDF - EEWORLD Datasheet

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ES1A: Description1 A, 50 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size176KB，9 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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ES1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE

ES1A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	50 V
surface mount	YES

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ES1A thru ES1G

Surface Mount Glass Passivated Super Fast Rectifiers

Reverse Voltage 50 to 400V Forward Current 1.0A

FEATURES

* Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

High temperature metallurgically

bonded construction

For use in high frequency rectifier circuits

Fast switching for high efficiency

Cavity-free glass passivated junction

Capable of meeting environmental standards

of MIL-S-19500

1.0 A operation at TA=75°C with no thermal runaway

Typical IR less than 1.0µA

High temperature soldering guaranteed:

260°C/10 seconds

Mechanical Data

Case:

JEDEC DO-214AC, molded plastic over glass die

Terminals:

Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.0023 oz., 0.065 g

Handling precautin:None

We declare that the material of product compliance

with ROHS requirements

1.Electrical Characteristic

Maximum & Thermal Characteristics Ratings

at 25°C ambient temperature unless otherwise specified.

Parameter Symbol

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

= 110°C

symbol

RRM

RMS

IF(AV)

ES1A

ES1B

100

ES1C

150

105

150

1.0

–50

to +150

ES1D

200

140

200

ES1G

400

280

400

Unit

°C/W

°C

Peak forward surge current 8.3ms single half sine-wave

FSM

superimposed on rated load (JEDEC Method)

Typical thermal resistance (Note 2)

RθJA

TJ,

Operating junction and storage temperature range

TSTG

Electrical Characteristics Ratings

at 25°C ambient temperature unless otherwise specified.

Parameter Symbol

Maximum instantaneous forward voltage at 0.6A

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current TA = 25°C

at rated DC blocking voltage TA = 100°C

Typical reverse recovery time (Note 1)

Typical junction capacitance at 4.0V, 1MHz

NOTES:

1. IF = 0.5A, IR = 1.0A, IRR = 0.25A

2. 8.0mm2 (.013mm thick) land areas

symbol ES1A

trr

ES1B

ES1C

ES1D

ES1G

1.25

5.0

200

10.0

Unit

µA

0.90

0.98

ES1A Related Products

	ES1A	ES1B	ES1C	ES1D	ES1G
Description	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V	0.9 V	0.9 V	0.9 V	1.25 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	50 V	100 V	150 V	200 V	400 V
surface mount	YES	YES	YES	YES	YES
Maker	LRC	LRC	-	LRC	-
Is Samacsys	-	N	N	N	N
Base Number Matches	-	1	1	1	1

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