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K4N56163QG-ZC250

Description
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, FBGA-84
Categorystorage    storage   
File Size1MB,64 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K4N56163QG-ZC250 Overview

DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, FBGA-84

K4N56163QG-ZC250 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA, BGA84,9X15,32
Contacts84
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B84
JESD-609 codee1
length13 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level2
Number of functions1
Number of ports1
Number of terminals84
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA84,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.01 A
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width11 mm

K4N56163QG-ZC250 Related Products

K4N56163QG-ZC250 K4N56163QG-ZC220 K4N56163QG-ZC200 K4N56163QG-ZC2A0
Description DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, FBGA-84 DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84 DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84
Is it Rohs certified? conform to conform to conform to conform to
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code BGA BGA BGA BGA
package instruction TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
Contacts 84 84 84 84
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.4 ns 0.35 ns 0.35 ns 0.45 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 400 MHz 450 MHz 500 MHz 350 MHz
I/O type COMMON COMMON COMMON COMMON
interleaved burst length 4,8 4,8 4,8 4,8
JESD-30 code R-PBGA-B84 R-PBGA-B84 R-PBGA-B84 R-PBGA-B84
JESD-609 code e1 e1 e1 e1
length 13 mm 13 mm 13 mm 13 mm
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 16 16
Humidity sensitivity level 2 2 2 2
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 84 84 84 84
word count 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
organize 16MX16 16MX16 16MX16 16MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260 260 260
power supply 1.8 V 2 V 2 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES
Continuous burst length 4,8 4,8 4,8 4,8
Maximum supply voltage (Vsup) 1.9 V 2.1 V 2.1 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.9 V 1.9 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 2 V 2 V 1.8 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 40 40
width 11 mm 11 mm 11 mm 11 mm
Maximum standby current 0.01 A 0.01 A - 0.01 A
Maximum slew rate 0.4 mA 0.42 mA - 0.37 mA
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