|
K4N56163QG-ZC250 |
K4N56163QG-ZC220 |
K4N56163QG-ZC200 |
K4N56163QG-ZC2A0 |
Description |
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, FBGA-84 |
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84 |
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84 |
DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 |
Is it Rohs certified? |
conform to |
conform to |
conform to |
conform to |
Maker |
SAMSUNG |
SAMSUNG |
SAMSUNG |
SAMSUNG |
Parts packaging code |
BGA |
BGA |
BGA |
BGA |
package instruction |
TFBGA, BGA84,9X15,32 |
TFBGA, BGA84,9X15,32 |
TFBGA, BGA84,9X15,32 |
TFBGA, BGA84,9X15,32 |
Contacts |
84 |
84 |
84 |
84 |
Reach Compliance Code |
compliant |
compliant |
compliant |
compliant |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
access mode |
FOUR BANK PAGE BURST |
FOUR BANK PAGE BURST |
FOUR BANK PAGE BURST |
FOUR BANK PAGE BURST |
Maximum access time |
0.4 ns |
0.35 ns |
0.35 ns |
0.45 ns |
Other features |
AUTO/SELF REFRESH |
AUTO/SELF REFRESH |
AUTO/SELF REFRESH |
AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) |
400 MHz |
450 MHz |
500 MHz |
350 MHz |
I/O type |
COMMON |
COMMON |
COMMON |
COMMON |
interleaved burst length |
4,8 |
4,8 |
4,8 |
4,8 |
JESD-30 code |
R-PBGA-B84 |
R-PBGA-B84 |
R-PBGA-B84 |
R-PBGA-B84 |
JESD-609 code |
e1 |
e1 |
e1 |
e1 |
length |
13 mm |
13 mm |
13 mm |
13 mm |
memory density |
268435456 bit |
268435456 bit |
268435456 bit |
268435456 bit |
Memory IC Type |
DDR DRAM |
DDR DRAM |
DDR DRAM |
DDR DRAM |
memory width |
16 |
16 |
16 |
16 |
Humidity sensitivity level |
2 |
2 |
2 |
2 |
Number of functions |
1 |
1 |
1 |
1 |
Number of ports |
1 |
1 |
1 |
1 |
Number of terminals |
84 |
84 |
84 |
84 |
word count |
16777216 words |
16777216 words |
16777216 words |
16777216 words |
character code |
16000000 |
16000000 |
16000000 |
16000000 |
Operating mode |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
Maximum operating temperature |
85 °C |
85 °C |
85 °C |
85 °C |
organize |
16MX16 |
16MX16 |
16MX16 |
16MX16 |
Output characteristics |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
encapsulated code |
TFBGA |
TFBGA |
TFBGA |
TFBGA |
Encapsulate equivalent code |
BGA84,9X15,32 |
BGA84,9X15,32 |
BGA84,9X15,32 |
BGA84,9X15,32 |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
GRID ARRAY, THIN PROFILE, FINE PITCH |
GRID ARRAY, THIN PROFILE, FINE PITCH |
GRID ARRAY, THIN PROFILE, FINE PITCH |
GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) |
260 |
260 |
260 |
260 |
power supply |
1.8 V |
2 V |
2 V |
1.8 V |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
refresh cycle |
8192 |
8192 |
8192 |
8192 |
Maximum seat height |
1.2 mm |
1.2 mm |
1.2 mm |
1.2 mm |
self refresh |
YES |
YES |
YES |
YES |
Continuous burst length |
4,8 |
4,8 |
4,8 |
4,8 |
Maximum supply voltage (Vsup) |
1.9 V |
2.1 V |
2.1 V |
1.9 V |
Minimum supply voltage (Vsup) |
1.7 V |
1.9 V |
1.9 V |
1.7 V |
Nominal supply voltage (Vsup) |
1.8 V |
2 V |
2 V |
1.8 V |
surface mount |
YES |
YES |
YES |
YES |
technology |
CMOS |
CMOS |
CMOS |
CMOS |
Temperature level |
OTHER |
OTHER |
OTHER |
OTHER |
Terminal surface |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form |
BALL |
BALL |
BALL |
BALL |
Terminal pitch |
0.8 mm |
0.8 mm |
0.8 mm |
0.8 mm |
Terminal location |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
Maximum time at peak reflow temperature |
40 |
40 |
40 |
40 |
width |
11 mm |
11 mm |
11 mm |
11 mm |
Maximum standby current |
0.01 A |
0.01 A |
- |
0.01 A |
Maximum slew rate |
0.4 mA |
0.42 mA |
- |
0.37 mA |