K4N56163QG-ZC2A0 datasheet, PDF

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K4N56163QG-ZC2A0: DescriptionDDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84; Categorystorage storage; File Size1MB，64 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4N56163QG-ZC2A0 Overview

DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84

K4N56163QG-ZC2A0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA84,9X15,32
Contacts	84
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	350 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
JESD-609 code	e1
length	13 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	2
Number of functions	1
Number of ports	1
Number of terminals	84
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.01 A
Maximum slew rate	0.37 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	11 mm

K4N56163QG-ZC2A0 Related Products

	K4N56163QG-ZC2A0	K4N56163QG-ZC220	K4N56163QG-ZC200	K4N56163QG-ZC250
Description	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84	DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84	DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84	DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, FBGA-84
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32
Contacts	84	84	84	84
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.45 ns	0.35 ns	0.35 ns	0.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	350 MHz	450 MHz	500 MHz	400 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84
JESD-609 code	e1	e1	e1	e1
length	13 mm	13 mm	13 mm	13 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16
Humidity sensitivity level	2	2	2	2
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	84	84	84	84
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
organize	16MX16	16MX16	16MX16	16MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260
power supply	1.8 V	2 V	2 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8
Maximum supply voltage (Vsup)	1.9 V	2.1 V	2.1 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.9 V	1.9 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	2 V	2 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40	40
width	11 mm	11 mm	11 mm	11 mm
Maximum standby current	0.01 A	0.01 A	-	0.01 A
Maximum slew rate	0.37 mA	0.42 mA	-	0.4 mA

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