DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| Parts packaging code | BGA |
| package instruction | TFBGA, BGA84,9X15,32 |
| Contacts | 84 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 0.35 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 450 MHz |
| I/O type | COMMON |
| interleaved burst length | 4,8 |
| JESD-30 code | R-PBGA-B84 |
| JESD-609 code | e1 |
| length | 13 mm |
| memory density | 268435456 bit |
| Memory IC Type | DDR DRAM |
| memory width | 16 |
| Humidity sensitivity level | 2 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 84 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | |
| organize | 16MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Encapsulate equivalent code | BGA84,9X15,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 2 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Continuous burst length | 4,8 |
| Maximum standby current | 0.01 A |
| Maximum slew rate | 0.42 mA |
| Maximum supply voltage (Vsup) | 2.1 V |
| Minimum supply voltage (Vsup) | 1.9 V |
| Nominal supply voltage (Vsup) | 2 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| width | 11 mm |
| K4N56163QG-ZC220 | K4N56163QG-ZC200 | K4N56163QG-ZC250 | K4N56163QG-ZC2A0 | |
|---|---|---|---|---|
| Description | DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84 | DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84 | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 |
| Is it Rohs certified? | conform to | conform to | conform to | conform to |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | BGA | BGA | BGA | BGA |
| package instruction | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 |
| Contacts | 84 | 84 | 84 | 84 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Maximum access time | 0.35 ns | 0.35 ns | 0.4 ns | 0.45 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 450 MHz | 500 MHz | 400 MHz | 350 MHz |
| I/O type | COMMON | COMMON | COMMON | COMMON |
| interleaved burst length | 4,8 | 4,8 | 4,8 | 4,8 |
| JESD-30 code | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 |
| JESD-609 code | e1 | e1 | e1 | e1 |
| length | 13 mm | 13 mm | 13 mm | 13 mm |
| memory density | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
| Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| memory width | 16 | 16 | 16 | 16 |
| Humidity sensitivity level | 2 | 2 | 2 | 2 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 84 | 84 | 84 | 84 |
| word count | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
| character code | 16000000 | 16000000 | 16000000 | 16000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C |
| organize | 16MX16 | 16MX16 | 16MX16 | 16MX16 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | TFBGA | TFBGA | TFBGA | TFBGA |
| Encapsulate equivalent code | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 |
| power supply | 2 V | 2 V | 1.8 V | 1.8 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 8192 | 8192 | 8192 | 8192 |
| Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| self refresh | YES | YES | YES | YES |
| Continuous burst length | 4,8 | 4,8 | 4,8 | 4,8 |
| Maximum supply voltage (Vsup) | 2.1 V | 2.1 V | 1.9 V | 1.9 V |
| Minimum supply voltage (Vsup) | 1.9 V | 1.9 V | 1.7 V | 1.7 V |
| Nominal supply voltage (Vsup) | 2 V | 2 V | 1.8 V | 1.8 V |
| surface mount | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | OTHER | OTHER | OTHER | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL | BALL | BALL | BALL |
| Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 |
| width | 11 mm | 11 mm | 11 mm | 11 mm |
| Maximum standby current | 0.01 A | - | 0.01 A | 0.01 A |
| Maximum slew rate | 0.42 mA | - | 0.4 mA | 0.37 mA |
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