FQPF10N60C datasheet, PDF - EEWORLD Datasheet

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FQPF10N60C: Description9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size2MB，13 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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FQPF10N60C Overview

9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN

FQPF10N60C Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-220AB
package instruction	LEAD FREE, TO-220F, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Other features	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	9.5 A
Maximum drain-source on-resistance	0.73 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Humidity sensitivity level	NOT APPLICABLE
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	38 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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FQPF10N60C Related Products

	FQPF10N60C	FQP10N60C	FQPF10N60CT
Description	9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN	9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN	9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	LEAD FREE, TO-220F, 3 PIN	TO-220, 3 PIN	LEAD FREE, TO-220F, 3 PIN
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
Other features	FAST SWITCHING	FAST SWITCHING	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	700 mJ	700 mJ	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V
Maximum drain current (ID)	9.5 A	9.5 A	9.5 A
Maximum drain-source on-resistance	0.73 Ω	0.73 Ω	0.73 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	38 A	38 A	38 A
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	NO	NO	NO
Terminal surface	MATTE TIN	MATTE TIN	NOT SPECIFIED
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	Lead free	-
Is it Rohs certified?	conform to	conform to	-
Shell connection	ISOLATED	-	ISOLATED
JESD-609 code	e3	e3	-
Humidity sensitivity level	NOT APPLICABLE	NOT APPLICABLE	-
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT APPLICABLE	-
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT APPLICABLE	-

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