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Datasheet> All Categories > Discrete semiconductor> The transistor> FDS6570A_NL
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FDS6570A_NL

Description
Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size66KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FDS6570A_NL Overview

Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

FDS6570A_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT
package instructionSO-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.0075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDS6570A_NL Preview

FDS6570A
March 2000
FDS6570A
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
15 A, 20 V. R
DS(on)
= 0.0075
Ω
@ V
GS
= 4.5 V
R
DS(on)
= 0.010
Ω
@ V
GS
= 2.5 V.
•
•
•
•
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Battery protection
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
T
A
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
FDS6570A
20
(Note 1a)
Units
V
V
A
W
±
8
15
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
FDS6570A
Device
FDS6570A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS6570A Rev. C
FDS6570A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
Min Typ
20
29
Max
Units
V
mV/°C
Off Characteristics
1
100
-100
µA
nA
nA
Gate-Body Leakage Current, Reverse V
GS
= -8 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
GS
= 4.5 V, I
D
=15 A
V
GS
= 4.5 V, I
D
=15 A,
T
J
=125°C
V
GS
= 2.5 V, I
D
=12 A
V
GS
= 4.5 V, V
DS
= 5.0 V
V
DS
= 5 V, I
D
= 15 A
0.4
0.9
-4
0.006
0.009
0.008
1.5
V
mV/°C
0.0075
0.0130
0.0100
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
70
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
4700
850
310
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
20
27
95
35
32
44
133
56
66
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 15 A,
V
GS
= 5 V,
47
7
10.5
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
2.1
0.65
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS6570A Rev. C
FDS6570A
Typical Characteristics
50
V
GS
= 4.5V
2.5V
I
D
, DRAIN CURRENT (A)
40
3.0V
30
2.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
2
1.5
V
GS
= 2.0V
2.5V
3.0V
20
1
4.5V
10
1.5V
0
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.03
R
DS(ON)
, ON RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 15A
V
GS
= 4.5V
I
D
= 7.0A
0.024
1.4
1.2
0.018
1
0.012
T
J
= 125 C
25 C
o
o
0.8
0.006
0.6
-50
-25
0
25
50
75
100
o
125
150
0
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
50
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
40
T
J
= -55 C
125 C
o
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
25 C
o
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0
10
T
J
=125 C
1
o
o
30
25 C
125 C
o
20
0.1
10
0.01
0
0.5
1
1.5
2
2.5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6570A Rev. C
FDS6570A
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
(continued)
7000
6000
4
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
5000
C
iss
4000
3000
2000
1000
0
C
oss
C
rss
0
4
8
12
16
20
3
2
1
0
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R
DS(ON)
Limit
I
D
, DRAIN CURRENT (A)
1ms
10
1s
10s
DC
V
GS
= 4.5V
SINGLE
PULSE
R
θ
JA
= 125 C/W
0.01
0.01
0.1
1
10
100
o
50
100
µ
s
SINGLE PULSE
40
POWER (W)
R
θ
JA
=125 C/W
T
A
=25 C
30
o
o
10ms
100ms
1
20
0.1
10
0
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
Single Pulse
r(t), NORMALIZED EFFECTIVE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6570A Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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