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75N10

Description
N-Channel Power MOSFET
File Size400KB,8 Pages
ManufacturerNell
Websitehttps://www.nellsemi.com
Download Datasheet View All

75N10 Overview

N-Channel Power MOSFET

SEMICONDUCTOR
75N10 Series
N-Channel Power MOSFET
(75A, 100Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
75N10
is a three-terminal silicon device
with current conduction capability of 75A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 100V, and max. threshold voltage of 5 volts.
D
D
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications.
These transistors can be operated directly from
integrated circuits.
G
D
S
TO-3PB
(75N10A)
G
D
S
TO-220AB
(75N10B)
FEATURES
R
DS(ON)
= 0.025Ω @ V
GS
= 10V
Ultra low gate charge(74nC typical)
Low reverse transfer capacitance
(C
RSS
= 275pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
D (Drain)
S (Source)
PRODUCT SUMMARY
I
D
(A)
I
D
(A), Package Limited
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) typical
75
75
100
0.025 @ V
GS
= 10V
74
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=1MΩ
VALUE
100
100
±20
UNIT
V
T
C
=25°C
T
C
=100°C
75
50
A
200
50
30
mJ
1000
10
V /ns
W
1.90
-55 to 150
-55 to 150
°
C/W
ºC
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
Total power dissipation
Linear derating factor above T
C
=25
°
C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
T
C
=25°C
l
AS
=50A,
L
=0.8mH
300
300
10 (1.1)
lbf . in (N . m)
Note:
1.
Caluclated continuous current based on maximum allowable junction temperature. Package limitation current is 75A
2
.
Repetitive rating: pulse width limited by junction temperature.
3
.
L
= 0.8mH,
I
AS
≤ 50A ,
R
G
= 25
Ω
,T
J
≤ 150
°C.
4
.
I
SD
≤ 50A,
di/dt
≤ 100A/µs,
V
DD
V
(BR)DSS
, T
J
= 150
°C.
www.nellsemi.com
Page 1 of 8
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